Document Number: 001-64709 Rev. *E Page 4 of 16
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature with
power applied ......................................... –55 °C to + 125 °C
Supply voltage to ground
potential ....................................... –0.3 V to V
CC(max)
+ 0.3 V
DC voltage applied to outputs
in high Z state
[5, 6]
....................... –0.3 V to V
CC(max)
+ 0.3 V
DC input voltage
[5, 6]
................... –0.3 V to V
CC(max)
+ 0.3 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(per MIL-STD-883, method 3015) ......................... 2001 V
Latch-up current 200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[7]
CY62177ESL Industrial –40 °C to +85 °C 2.2 V to 3.6 V
and
4.5 V to 5.5 V
Electrical Characteristics
Over the operating range
Parameter Description Test Conditions
55 ns
Unit
Min Typ
[8]
Max
V
OH
Output HIGH voltage 2.2 V V
CC
2.7 V I
OH
= –0.1 mA 2.0 – – V
2.7 V V
CC
3.6 V I
OH
= –1.0 mA 2.4 – – V
4.5 V V
CC
5.5 V I
OH
= –1.0 mA 2.4 – – V
V
OL
Output LOW voltage 2.2 V V
CC
2.7 V I
OL
= 0.1 mA – – 0.4 V
2.7 V V
CC
3.6 V I
OL
= 2.1 mA – – 0.4 V
4.5 V V
CC
5.5 V I
OL
= 2.1 mA – – 0.4 V
V
IH
Input HIGH voltage 2.2 V V
CC
2.7 V 1.8 – V
CC
+ 0.3 V V
2.7 V V
CC
3.6 V 2.2 – V
CC
+ 0.3 V V
4.5 V V
CC
5.5 V 2.2 – V
CC
+ 0.3 V V
V
IL
Input LOW voltage 2.2 V V
CC
2.7 V –0.3 – 0.6 V
2.7 V V
CC
3.6 V –0.3 – 0.7
[9]
V
4.5 V V
CC
5.5 V –0.3 – 0.7
[9]
V
I
IX
Input leakage current GND V
I
V
CC
–1 – +1 A
I
OZ
Output leakage current GND V
O
V
CC
, Output disabled –1 – +1 A
I
CC
V
CC
operating supply current f = f
Max
= 1/t
RC
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
–3545mA
f = 1 MHz – 4.5 5.5 mA
I
SB2
[10]
Automatic power-down
current — CMOS inputs
CE
1
V
CC
– 0.2 V or CE
2
0.2 V or
(BHE
and BLE) V
CC
– 0.2 V,
V
IN
V
CC
– 0.2 V or V
IN
0.2 V,
f = 0, V
CC
= 3.6 V
–325A
Notes
5. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
6. V
IH(max)
= V
CC
+ 0.75 V for pulse durations less than 20 ns.
7. Full Device AC operation assumes a 100 s ramp time from 0 to V
CC
(min) and 200 s wait time after V
CC
stabilization.
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= 3 V, and V
CC
= 5 V, T
A
= 25 °C
9. Under DC conditions the device meets a V
IL
of 0.8 V. However, in dynamic conditions Input LOW voltage applied to the device must not be higher than 0.7 V.
10. Chip enables (CE
1
and CE
2
), byte enables (BHE and BLE) and BYTE must be tied to CMOS levels to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
