OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PHE13005,127

P1-P3P4-P6P7-P9P10-P12P13-P13
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
A
B
PHE13005
Silicon diffused power transistor
21 January 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
High voltage, high speed NPN planar-passivated power switching transistor in a SOT78
plastic package intended for use in high frequency electronic lighting ballast applications
2. Features and benefits
•
Fast switching
•
High voltage capability of 700 V
•
Low thermal resistance
3. Applications
•
Electronic lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
C
collector current DC; Fig. 4; Fig. 1; Fig. 2 - - 4 A
P
tot
total power dissipation T
mb
≤ 25 °C; Fig. 3 - - 75 W
V
CESM
collector-emitter peak
voltage
V
BE
= 0 V - - 700 V
Static characteristics
I
C
= 1 A; V
CE
= 5 V; T
mb
= 25 °C;
Fig. 11
12 20 40h
FE
DC current gain
I
C
= 2 A; V
CE
= 5 V; T
mb
= 25 °C;
Fig. 11
10 17 28
NXP Semiconductors
PHE13005
Silicon diffused power transistor
PHE13005 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 21 January 2014 2 / 12
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 B base
2 C collector
3 E emitter
mb C mounting base; connected to
collector
1 2
mb
3
TO-220AB (SOT78)
sym123
C
E
B
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PHE13005 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CESM
collector-emitter peak voltage V
BE
= 0 V - 700 V
V
CBO
collector-base voltage I
E
= 0 A - 700 V
V
CEO
collector-emitter voltage I
B
= 0 A - 400 V
I
C
collector current DC; Fig. 4; Fig. 1; Fig. 2 - 4 A
I
CM
peak collector current - 8 A
I
B
base current DC - 2 A
I
BM
peak base current - 4 A
P
tot
total power dissipation T
mb
≤ 25 °C; Fig. 3 - 75 W
T
stg
storage temperature -65 150 °C
T
j
junction temperature - 150 °C
V
EBO
emitter-base voltage I
C
= 0 A - 9 V
P1-P3P4-P6P7-P9P10-P12P13-P13

PHE13005,127

Mfr. #:
Buy PHE13005,127
Manufacturer:
WeEn Semiconductors
Description:
Bipolar Transistors - BJT RAIL BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet