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PHE13005,127

P1-P3P4-P6P7-P9P10-P12P13-P13
NXP Semiconductors
PHE13005
Silicon diffused power transistor
PHE13005 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 21 January 2014 3 / 12
001aab999
DUT
L
C
L
B
I
Bon
V
BB
V
CC
V
CL(CE)
probe point
Fig. 1. Test circuit for reverse bias safe operating area
Fig. 2. Reverse bias safe operating area
03aa13
0
40
80
120
0 50 100 150 200
T
h
(°C)
P
der
(%)
Fig. 3. Normalized total power dissipation as a function of heatsink temperature
NXP Semiconductors
PHE13005
Silicon diffused power transistor
PHE13005 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 21 January 2014 4 / 12
001aai071
10
- 1
10
- 2
10
1
10
2
I
C
(A)
10
- 3
V
CL(CE)
(V)
1 10
3
10
2
10
(1)
100 µs
200 µs
(3)
t
p
= 20 µs
duty cycle = 0.01
50 µs
500 µs
DC
(4)
(5)
(2)
I
CM(max)
I
C(max)
Fig. 4. Forward bias safe operating area
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5 - - 1.67 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 60 - K/W
003aad543
t
p
(s)
10
- 5
1 1010
- 1
10
- 2
10
- 4
10
- 3
1
10
- 1
10
Z
th(j-mb)
(K/W)
10
- 2
δ = 0.5
0.2
0.1
t
p
t
p
1/f
P
t
1/f
δ =
0.01
0.05
0.02
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
NXP Semiconductors
PHE13005
Silicon diffused power transistor
PHE13005 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 21 January 2014 5 / 12
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics
I
C
= 2 A; I
Bon
= 0.4 A; I
Boff
= -0.4 A;
R
L
= 75 Ω; T
mb
= 25 °C; resistive load;
Fig. 12; Fig. 13
- 2.7 4 µs
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 µH; T
mb
= 25 °C; inductive load;
Fig. 14; Fig. 15
- 1.2 2 µs
t
s
storage time
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 µH; T
mb
= 100 °C; inductive
load; Fig. 14; Fig. 15
- 1.4 4 µs
I
C
= 2 A; I
Bon
= 0.4 A; I
Boff
= -0.4 A;
R
L
= 75 Ω; T
mb
= 25 °C; resistive load;
Fig. 12; Fig. 13
- 0.3 0.9 µs
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 µH; T
mb
= 25 °C; inductive load;
Fig. 14; Fig. 15
- 0.1 0.5 µs
t
f
fall time
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 µH; T
mb
= 100 °C; inductive
load; Fig. 14; Fig. 15
- 0.16 0.9 µs
Static characteristics
V
BE
= -1.5 V; V
CE
= 700 V; T
j
= 25 °C - - 1 mAI
CES
collector-emitter cut-off
current
V
BE
= -1.5 V; V
CE
= 700 V; T
j
= 100 °C - - 5 mA
I
CBO
collector-base cut-off
current
V
CB
= 700 V; I
E
= 0 A; T
mb
= 25 °C - - 1 mA
I
CEO
collector-emitter cut-off
current
V
CE
= 400 V; I
B
= 0 A; T
mb
= 25 °C - - 0.1 mA
I
EBO
emitter-base cut-off
current
V
EB
= 9 V; I
C
= 0 A; T
mb
= 25 °C - - 1 mA
V
CEOsus
collector-emitter
sustaining voltage
I
B
= 0 A; I
C
= 10 mA; L
C
= 25 mH;
T
mb
= 25 °C; Fig. 6; Fig. 7
400 - - V
I
C
= 1 A; I
B
= 0.2 A; T
mb
= 25 °C; Fig. 8;
Fig. 9
- 0.1 0.5 V
I
C
= 2 A; I
B
= 0.5 A; T
mb
= 25 °C; Fig. 8;
Fig. 9
- 0.2 0.6 V
V
CEsat
collector-emitter
saturation voltage
I
C
= 4 A; I
B
= 1 A; T
mb
= 25 °C; Fig. 8;
Fig. 9
- 0.3 1 V
V
BEsat
base-emitter saturation
voltage
I
C
= 1 A; I
B
= 0.2 A; T
mb
= 25 °C;
Fig. 10
- 0.85 1.2 V
P1-P3P4-P6P7-P9P10-P12P13-P13

PHE13005,127

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Buy PHE13005,127
Manufacturer:
WeEn Semiconductors
Description:
Bipolar Transistors - BJT RAIL BIPOLAR
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