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PHE13005,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
NXP Semiconductors
PHE13005
Silicon diffused power transistor
PHE13005
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
21 January 2014
6 / 12
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
I
C
= 2 A; I
B
= 0.5 A; T
mb
= 25 °C;
Fig. 10
-
0.92
1.6
V
I
C
= 1 A; V
CE
= 5 V; T
mb
= 25 °C;
Fig. 1
1
12
20
40
h
FE
DC current gain
I
C
= 2 A; V
CE
= 5 V; T
mb
= 25 °C;
Fig. 1
1
10
17
28
001aab987
horizontal
1 Ω
300 Ω
6
V
vertical
oscilloscope
50
V
100 Ω to 200 Ω
30 Hz to 60 Hz
Fig. 6.
T
est circuit for collector-emitter sustaining
voltage
001aab988
V
CE
(V)
min
V
CEOsus
I
C
(mA)
10
100
250
0
Fig. 7.
Oscilloscope display for collector-emitter
sustaining voltage test waveform
I
B
(A)
10
-
2
10
1
10
-
1
003aad540
0.8
1.2
0.4
1.6
2.0
V
CEsat
(V)
0
2
A
3 A
4 A
I
C
= 1 A
Fig. 8.
Collector-emitter saturation voltage; typical
values
003aad542
V
CEsat
(V)
I
C
(A)
10
-
1
10
1
0.4
0.2
0.6
0.8
1.0
0
Fig. 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
NXP Semiconductors
PHE13005
Silicon diffused power transistor
PHE13005
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
21 January 2014
7 / 12
003aad541
V
BEsat
(V)
I
C
(A)
10
-
1
10
1
0.6
0.8
0.2
0.4
1.0
1.2
1.4
0
Fig. 10.
Base-emitter saturation voltage; typical values
003aad539
I
C
(A)
10
-
2
10
1
10
-
1
10
10
2
h
FE
1
V
CE
= 5 V
1 V
Fig. 1
1.
DC current gain as a function of collector
current; typical values
001aab989
t
p
R
B
V
IM
0
R
L
DUT
V
CC
T
Fig. 12.
T
est circuit for resistive load switching
001aab990
I
C
I
B
10 %
10 %
90 %
90 %
t
on
t
off
t
s
t
f
t
t
I
Bon
-
I
Boff
I
Con
t
r
≤ 30 ns
Fig. 13.
Switching times waveforms for resistive load
NXP Semiconductors
PHE13005
Silicon diffused power transistor
PHE13005
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
21 January 2014
8 / 12
001aab991
V
CC
L
C
DUT
L
B
I
Bon
V
BB
Fig. 14.
T
est circuit for inductive load switching
001aab992
I
C
I
B
90 %
t
off
I
Bon
t
s
t
f
t
t
-
I
Boff
I
Con
10 %
Fig. 15.
Switching times waveforms for inductive load
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PHE13005,127
Mfr. #:
Buy PHE13005,127
Manufacturer:
WeEn Semiconductors
Description:
Bipolar Transistors - BJT RAIL BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
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