MT9VDVF6472Y-335F1

PDF: 09005aef81c737fb/Source: 09005aef81c7379d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVF9C64x72.fm - Rev. B 10/07 EN
10 ©2005 Micron Technology, Inc. All rights reserved.
512MB (x72, ECC, SR) 184-Pin DDR VLP RDIMM
Register and PLL Specifications
Notes: 1. PLL timing and switching specifications are critical for proper operation of the DDR DIMM.
This is a subset of parameters for the specific PLL used. Detailed PLL information is available
in JEDEC standard JESD82-1A.
Table 10: PLL Specifications
CVF857 device or equivalent JESD82-1A
Parameter Symbol Pins Condition Min Max Units
DC high-level input voltage
V
IH RESET# LVCMOS 1.7 VDDQ + 0.3 V
DC low-level input voltage
V
IL RESET# LVCMOS –0.3 0.7 V
Input voltage (limits)
V
IN RESET#, CK, CK# –0.3 VDDQ + 0.3 V
Input differential-pair cross
voltage
V
IX CK, CK# Differential input (VDDQ/2) - 0.2 (VDDQ/2) + 0.2 V
Input differential voltage
V
ID(DC) CK, CK# Differential input 0.36 VDDQ + 0.6 V
Input differential voltage
V
ID(AC) CK, CK# Differential input 0.7 VDDQ + 0.6 V
Input current
I
I RESET# VI = VDDQ or VSSQ –10 +10 µA
CK, CK# V
I = VDDQ or VSSQ –10 +10 µA
Output disabled current
I
ODL RESET# = VSSQ;
V
I = VIH(AC) or VIL(DC)
100 µA
Static supply current
I
DDPD CK = CK# = LOW 200 µA
Dynamic supply
I
DD n/a CK, CK# = 270 MHz, all
outputs open
(not connected to
PCB)
–300mA
Input capacitance
C
IN Each input VI = VDDQ or VSSQ2.0 3.5pF
Table 11: PLL Clock Driver Timing Requirements and Switching Characteristics
Parameter Symbol Min Max Units
Stabilization time
t
L–100µs
Input clock slew rate
t
slr(i) 1.0 4.0 V/ns
SSC modulation frequency
–3050kHz
SSC clock input frequency deviation
–00.5%
PLL loop bandwidth (–3dB from unity gain)
–2.0 MHz
PDF: 09005aef81c737fb/Source: 09005aef81c7379d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVF9C64x72.fm - Rev. B 10/07 EN
11 ©2005 Micron Technology, Inc. All rights reserved.
512MB (x72, ECC, SR) 184-Pin DDR VLP RDIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Serial Presence-Detect Data
For the latest serial presence-detect data, refer to Microns SPD page:
www.micron.com/SPD.
Table 12: Serial Presence-Detect EEPROM DC Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 2.3 3.6 V
Input high voltage: Logic 1; All inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –1.0 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
VOL –0.4V
Input leakage current: V
IN = GND to VDD
ILI –10µA
Output leakage current: V
OUT = GND to VDD
ILO –10µA
Standby current: SCL = SDA = V
DD - 0.3V; All other inputs = VSS or VDD
ISB –30µA
Power supply current: SCL clock frequency = 100 kHz
I
CC –2.0mA
Table 13: Serial Presence-Detect EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
Clock/data fall time
t
F 300 ns 2
Clock/data rise time
t
R 300 ns 2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
®
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prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of
their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth
herein. Although considered final, these specifications are subject to change, as further product development and data
characterization sometimes occur.
512MB (x72, ECC, SR) 184-Pin DDR VLP RDIMM
Module Dimensions
PDF: 09005aef81c737fb/Source: 09005aef81c7379d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVF9C64x72.fm - Rev. B 10/07 EN
12 ©2005 Micron Technology, Inc. All rights reserved.
Module Dimensions
Figure 3: 184-Pin DDR VLP RDIMM
Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for addi-
tional design dimensions.
U1 U2 U3 U4 U5
U6
U7
U8 U9 U10 U11
U12
U13
18.42 (0.725)
18.16 (0.715)
Pin 1
2.5 (0.098) D
(2X)
2.31 (0.091) TYP
6.35 (0.25) TYP
120.65 (4.75)
TYP
1.27 (0.05)
TYP
2.21 (0.087) TYP
1.02 (0.04)
TYP
2.0 (0.079) R
(4X)
0.9 (0.035) R
Pin 92
Front view
133.50 (5.256)
133.20 (5.244)
64.77 (2.55)
TYP
49.53 (1.95)
TYP
10.0 (0.394)
TYP
Back view
Pin 184
Pin 93
1.37 (0.054)
1.17 (0.046)
4.0 (0.157)
MAX
1.0 (0.039) TYP
73.28 (2.88)
TYP
3.8 (0.15) TYP

MT9VDVF6472Y-335F1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR SDRAM 512MB 184RDIMM
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New from this manufacturer.
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