–3–REV. C
AD8017
SPECIFICATIONS
(@ 25C, V
S
= 2.5 V, R
L
= 100 , R
F
= R
G
= 619 , unless otherwise noted.)
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth G = +2, V
OUT
< 0.4 V p-p 75 120 MHz
0.1 dB Bandwidth V
OUT
< 0.4 V p-p 40 MHz
Large Signal Bandwidth V
OUT
= 4 V p-p 100 MHz
Slew Rate Noninverting, V
OUT
= 2 V p-p, G = +2 800 V/µs
Rise and Fall Time Noninverting, V
OUT
= 2 V p-p 2.2 ns
Settling Time 0.1%, V
OUT
= 2 V Step 35 ns
Overload Recovery V
IN
= 2.5 V p-p 74 ns
NOISE/HARMONIC PERFORMANCE
Distortion V
OUT
= 2 V p-p
Second Harmonic 500 kHz, R
L
= 100 /25 –75/–68 dBc
1 MHz, R
L
= 100 /25 –73/–66 dBc
Third Harmonic 500 kHz, R
L
= 100 /25 –91/–88 dBc
1 MHz, R
L
= 100 /25 –79/–74 dBc
IP3 500 kHz, R
L
= 100 /25 40/36 dBm
IMD 500 kHz, R
L
= 100 /25 –78/–64 dBc
MTPR 26 kHz to 1.1 MHz –66 dBc
Input Noise Voltage f = 10 kHz 1.8 nV/Hz
Input Noise Current f = 10 kHz (+ Inputs) 23 pA/Hz
f = 10 kHz (– Inputs) 21 pA/Hz
Crosstalk f = 5 MHz, G = +2 –66 dB
DC PERFORMANCE
Input Offset Voltage 0.8 2.0 mV
T
MIN
to T
MAX
2.6 mV
Open Loop Transimpedance V
OUT
= 2 V p-p 40 166 k
T
MIN
to T
MAX
45 k
INPUT CHARACTERISTICS
Input Resistance +Input 50 k
Input Capacitance +Input 2.4 pF
Input Bias Current (+) 16 ±40 µA
T
MIN
to T
MAX
±62 µA
Input Bias Current (–) 2 ±25 µA
T
MIN
to T
MAX
±32 µA
CMRR V
CM
= ±1.0 (±1.0) 57 60 dB
Input CM Voltage Range ±1.6 V
OUTPUT CHARACTERISTICS
Output Resistance 0.2
Output Voltage Swing R
L
= 25 Ω±1.55 ±1.65 V
Output Current
1
Highest Harmonic < –55 dBc, 100 120 mA
f = 1 MHz, R
L
= 10
T
MIN
to T
MAX
Highest Harmonic
< 50 dBc 60 mA
Short-Circuit Current 1300 mA
POWER SUPPLY
Supply Current/Amp 6.2 7 mA
T
MIN
to T
MAX
7.3 mA
Operating Range Dual Supply ±2.2 ±6.0 V
Power Supply Rejection Ratio 59 62 dB
Operating Temperature Range –40 +85 ° C
NOTE
1
Output current is defined here as the highest current load delivered by the output of each amplifier into a specified resistive load ( R
L
= 10 ), while maintaining an
acceptable distortion level (i.e., less than –60 dBc highest harmonic) at a given frequency (f = 1 MHz).
Specifications subject to change without notice.
AD8017
–4–
REV. C
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . –65°C to +125°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device on a two-layer board with 2500 mm
2
of 2 oz. copper at
+25°C 8-lead SOIC package: θ
JA
= 95.0°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8017
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
device is determined by the glass transition temperature of the
plastic, approximately 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a junc-
tion temperature of 175°C for an extended period can result in
device failure.
The output stage of the AD8017 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8017 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.
AMBIENT TEMPERATURE C
2.0
1.5
0
0
90
10
MAXIMUM POWER DISSIPATION Watts
20 30 40 50 60 70 80
1.0
0.5
T
J
= 150C
T
J
= 125C
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature for AD8017
619 619
R
L
V
OUT
+V
S
V
S
10F
10F
+
+
0.1F
0.1F
49.9
V
IN
Figure 4. Test Circuit: Gain = +2
ORDERING GUIDE
Model Temperature Range Package Description Package Option
AD8017AR –40°C to +85°C 8-Lead SOIC SO-8
AD8017AR-REEL –40°C to +85°C Tape and Reel 13" SO-8
AD8017AR-REEL7 –40°C to +85°C Tape and Reel 7" SO-8
AD8017AR-EVAL Evaluation Board
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8017 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
619 619
R
L
V
OUT
+V
S
V
S
10F
10F
+
+
0.1F
0.1F
54.4
V
IN
Figure 5. Test Circuit: Gain = –1
AD8017
–5–REV. C
Typical Performance Characteristics
OUTPUT = 100mV
INPUT = 50mV
200ns/DIV
25mV/DIV
TPC 1. 100 mV Step Response; G = +2, V
S
=
±
2.5 V
or
±
6 V, R
L
= 100
OUTPUT = 4V
INPUT = 2V
200ns/DIV
1V/DIV
TPC 2. 4 V Step Response; G = +2, V
S
=
±
6 V,
R
L
= 100
OUTPUT = 100mV
INPUT = 100mV
200ns/DIV
50mV/DIV 25 mV/DIV
TPC 3. 100 mV Step Response; G = –1, V
S
=
±
2.5 V
or
±
6 V, R
L
= 100
OUTPUT = 4V
INPUT = 4V
200ns/DIV
2V/DIV 1V/DIV
TPC 4. 4 V Step Response; G = –1, V
S
=
±
6 V,
R
L
= 100

AD8017ARZ-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
High Speed Operational Amplifiers Crnt Hi Outpt VTG Line Dvr
Lifecycle:
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