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BLF278/01,112

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BLF278
VHF push-pull power MOS transistor
teehs atad tcudorP5102 rebmetpeS 1 — 5 .veR
IMPORTANT NOTICE
Dear customer,
As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as
an independent company under the new trade name Ampleon, which will be used
in future data sheets together with new contact details.
In data sheets, where the previous Philips references is mentioned, please use
the new links as shown below.
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sales.addresses@www.semiconductors.philips.com use
http://www.ampleon.com/sales
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © Ampleon B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest
sales office (details via http://www.ampleon.com/sales).
Thank you for your cooperation and understanding,
Ampleon
2003 Sep 19 2
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Broadcast transmitters in the VHF frequency range.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
PINNING - SOT262A1
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
PIN DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source
Fig.1 Simplified outline and symbol.
12
34
MAM098
Top view
55
d
g
s
d
g
QUICK REFERENCE DATA
RF performance at T
h
=25°C in a push-pull common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
CW, class-B 108 50 300 >20 >60
CW, class-C 108 50 300 typ. 18 typ. 80
CW, class-AB 225 50 250 >14
typ. 16
>50
typ. 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Sep 19 3
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor section
V
DS
drain-source voltage − 125 V
V
GS
gate-source voltage −±20 V
I
D
drain current (DC) − 18 A
P
tot
total power dissipation T
mb
≤ 25 °C; total device; both
sections equally loaded
− 500 W
T
stg
storage temperature −65 150 °C
T
j
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
thermal resistance from junction
to mounting base
total device; both sections
equally loaded.
max. 0.35 K/W
R
th mb-h
thermal resistance from
mounting base to heatsink
total device; both sections
equally loaded.
max. 0.15 K/W
Fig.2 DC SOAR.
Total device; both sections equally loaded.
(1) Current is this area may be limited by R
DSon
.
(2) T
mb
=25°C.
handbook, halfpage
1
10
100
1 10 100
(1)
500
I
D
(A)
V (V)
DS
MRA988
(2)
Fig.3 Power derating curves.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0 40 80 160
500
0
400
MGE616
120
300
200
100
P
tot
(W)
T
h
(°C)
(2)
(1)
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BLF278/01,112

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