2003 Sep 19 16
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
List of components (see Figs 21 and 22).
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2 multilayer ceramic chip capacitor;
note 1
27 pF, 500 V
C3, C4, C31, C32 multilayer ceramic chip capacitor;
note 1
3 × 18 pF
in parallel, 500 V
C5 film dielectric trimmer 4 to 40 pF 2222 809 08002
C6, C30 film dielectric trimmer 2 to 18 pF 2222 809 09006
C7 multilayer ceramic chip capacitor;
note 1
100 pF, 500 V
C8, C9, C15, C18 MKT film capacitor 1 µF, 63 V 2222 371 11105
C10, C13, C14,
C19, C36
multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C11, C12 multilayer ceramic chip capacitor;
note 1
2 × 1 nF in parallel,
500 V
C16, C17 electrolytic capacitor 220 µF, 63 V
C20 multilayer ceramic chip capacitor;
note 1
3 × 33 pF in
parallel, 500 V
C21 film dielectric trimmer 2 to 9 pF 2222 809 09005
C22, C27, C37,
C38
multilayer ceramic chip capacitor;
note 1
1 nF, 500 V
C23, C26, C35 electrolytic capacitor 10 µF, 63 V
C24, C25 multilayer ceramic chip capacitor;
note 1
2 × 470 pF in
parallel, 500 V
C28 multilayer ceramic chip capacitor;
note 1
2 × 10 pF +
1 × 18 pF in
parallel, 500 V
C29 multilayer ceramic chip capacitor;
note 1
2 × 5.6 pF in
parallel, 500 V
C33, C34 multilayer ceramic chip capacitor;
note 1
5.6 pF, 500 V
L1, L3, L22, L24 stripline; note 2 50 length 80 mm
width 4.8 mm
L2, L23 semi-rigid cable; note 3 50 ext. dia. 3.6 mm
outer conductor
length 80 mm
L4, L5 stripline; note 2 43 length 24 mm
width 6 mm
L6, L7 stripline; note 2 43 length 14.5 mm
width 6 mm
L8, L9 stripline; note 2 43 length 4.4 mm
width 6 mm
L10, L11 stripline; note 2 43 length 3.2 mm
width 6 mm
L12, L13 stripline; note 2 43 length 15 mm
width 6 mm
2003 Sep 19 17
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass
reinforced PTFE dielectric (ε
r
= 2.2), thickness
1
16
inch; thickness of copper sheet 2 × 35 µm.
3. L2 and L23 are soldered on to striplines L1 and L24 respectively.
L14, L17 2 × grade 3B Ferroxcube
wideband HF chokes in parallel
4312 020 36642
L15, L16 1
3
4
turns enamelled 2 mm copper
wire
40 nH int. dia. 10 mm
leads 2 × 7mm
space 1 mm
L18, L19 stripline; note 2 43 length 13 mm
width 6 mm
L20, L21 stripline; note 2 43 length 29.5 mm
width 6 mm
R1 metal film resistor 10 , 0.4 W
R2, R7 10 turns potentiometer 50 k
R3, R6 metal film resistor 1 k, 0.4 W
R4, R5 metal film resistor 2 × 5.62 Ω, in
parallel, 0.4 W
R8, R9 metal film resistor 10 Ω±5%, 1 W
R10 metal film resistor 4 × 42.2 in
parallel, 1 W
R11 metal film resistor 5.11 kΩ, 1W
IC1 voltage regulator 78L05
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
2003 Sep 19 18
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
Fig.22 Printed-circuit board and component layout for 225 MHz class-AB test circuit.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Dimensions in mm.
handbook, full pagewidth
MBC436
119
130
100
Hollow
rivets
Hollow
rivets
strap
strap
strap
strap
strap
strap
strap
strap
R11
C38
C35
C37
C36
C16
IC1
L2
L1
R1
C1
C2
C3
C4
C5
L4
L5
C6
slider R2
slider R7
C13
R6
C12
C17
L10
L11
R4
R5
L8L6
L7 L9
V
DD1
C10
R3
C11
C8
to R2,R7
V
DD1
V
DD2
C9
C7
L17
R9
L17
C18
C25 C27
C26
C19
L12
C20
L13
C21
C28
L18
L19
L20
L21
C29
C31
C32
C30
C33
C34
R10
50
output
50
input
L23
L24
L3
L22
C14
C22
C23
L14
R8
L14
C15
C24
L15
L16

BLF278/01,112

Mfr. #:
Manufacturer:
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Lifecycle:
New from this manufacturer.
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