2003 Sep 19 10
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
Notes
1. American Technical Ceramics capacitor, type 100B or capacitor of same quality.
2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass
PTFE dielectric (ε
r
= 2.2), thickness
1
16
inch; thickness of copper sheet 2 × 35 µm.
3. L22 is soldered on to stripline L21.
L17, L18 stripline; note 2 43 length 24.5 mm
width 6 mm
L19, L20 stripline; note 2 43 length 66 mm
width 6 mm
L21, L23 stripline; note 2 50 length 160 mm
width 4.8 mm
L22 semi-rigid cable; note 3 50 ext. dia. 3.6 mm
outer conductor
length 160 mm
R1 metal film resistor 10 , 0.4 W
R2, R7 10 turn potentiometer 50 k
R3, R6 metal film resistor 3 × 12.1 in
parallel, 0.4 W
R4, R5 metal film resistor 10 ; 0.4 W
R8, R9 metal film resistor 10 Ω±5%, 1 W
R10 metal film resistor 4 × 10 in
parallel, 1 W
R11 metal film resistor 5.11 kΩ, 1W
IC1 voltage regulator 78L05
T1 1:1 Balun; 7 turns type 4C6 50
coaxial cable wound around toroid
14 × 9 × 5 mm 4322 020 90770
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
2003 Sep 19 11
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
Fig.13 Printed-circuit board and component layout for 108 MHz class-B test circuit.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Dimensions in mm.
handbook, full pagewidth
130
150
100
strap
strap
strap
strap
strap
strap
strap
strap
MBC438
R1
C3
C2
C1
C4
L1
L2
C6
R11
C36
L3
L4
IC1
V
DD1
R2 and R7
C8
C11
C7
L5
L6
L7
L8
C9
C13
R3
C12
slider R2
R4
slider R7
C15
R6
R5
C10
C14
C23 C24
C25
C19
C18
V
DD2
L11
R8
L11
C22
C21
C20
C16
C17
V
DD1
L9
L10
L13
L14
L17
L18
C26 C27
C28
L19
L20
C29
C30
C31
C32
C33
C34
R10
50
input
50
output
L23
L21
L22
L12
L15
C35
C5
T1
L16
R9
L16
2003 Sep 19 12
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
Fig.14 Input impedance as a function of frequency
(series components); typical values per
section.
Class-B operation; V
DS
= 50 V; I
DQ
=2×0.1 A;
R
GS
=4 (per section); P
L
= 300 W.
handbook, halfpage
25 75 125
f (MHz)
175
2
1
Z
i
()
r
i
x
i
1
2
0
MGE685
Fig.15 Load impedance as a function of frequency
(series components); typical values per
section.
Class-B operation; V
DS
= 50 V; I
DQ
=2×0.1 A;
R
GS
=4 (per section); P
L
= 300 W.
handbook, halfpage
25 75 125
f (MHz)
175
8
6
Z
L
()
X
L
R
L
2
0
4
MGE686
Fig.16 Definition of MOS impedance.
handbook, halfpage
MBA379
Z
i
Z
L
Fig.17 Power gain as a function of frequency;
typical values per section.
Class-B operation; V
DS
= 50 V; I
DQ
=2×0.1 A;
R
GS
=4 (per section); P
L
= 300 W.
handbook, halfpage
25
30
20
10
0
75 125 175
MGE687
f (MHz)
G
p
(dB)

BLF278/01,112

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