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ADG779BKSZ-REEL7

P1-P3P4-P6P7-P9P10-P12P13-P13
ADG779
Rev. A | Page 3 of 12
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V
1
Table 1.
B Version
Parameter 25°C
−40°C to
+85°C
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA, see Figure 12
5 6 Ω max
On-Resistance Match Between Channels (ΔR
ON
) 0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
0.8 Ω max
On-Resistance Flatness (R
FLAT (ON)
) 0.75 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
1.2 Ω max
LEAKAGE CURRENTS
2
V
DD
= 5.5 V
Source Off Leakage I
S
(Off) ±0.01 ±0.05 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V, see Figure 13
Channel On Leakage I
D
, I
S
(On) ±0.01 ±0.05 nA typ V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V, see Figure 14
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
2
t
ON
14 ns typ R
L
= 300 Ω, C
L
= 35 pF
20 ns max V
S
= 3 V, see Figure 15
t
OFF
3 ns typ R
L
= 300 Ω, C
L
= 35 pF
6 ns max V
S
= 3 V, see Figure 15
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 ns min V
S1
= V
S2
= 3 V, see Figure 16
Off Isolation −67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−87 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 17
Channel-to-Channel Crosstalk −62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 18
Bandwidth –3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 19
C
S
(Off) 7 pF typ f = 1 MHz
C
D
, C
S
(On) 27 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 5.5 V
Digital Inputs = 0 V or 5 V
I
DD
0.001 μA typ
1.0 μA max
1
Temperature range is B Version, −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
ADG779
Rev. A | Page 4 of 12
V
DD
= 3 V ± 10%, GND = 0 V
1
Table 2.
B Version
Parameter 25°C
−40°C to
+85°C
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 6 7 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA, see Figure 12
10 Ω max
On-Resistance Match Between Channels (ΔR
ON
) 0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA
0.8 Ω max
On-Resistance Flatness (R
FLAT (ON)
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA
LEAKAGE CURRENTS
2
V
DD
= 3.3 V
Source Off Leakage I
S
(Off) ±0.01 ±0.05 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V, see Figure 13
Channel On Leakage I
D
, I
S
(On) ±0.01 ±0.05 nA typ V
S
= V
D
= 1 V, or V
S
= V
D
= 3 V, see Figure 14
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
2
t
ON
16 ns typ R
L
= 300 Ω, C
L
= 35 pF
24 ns max V
S
= 2 V, see Figure 15
t
OFF
4 ns typ R
L
= 300 Ω, C
L
= 35 pF
7 ns max V
S
= 2 V, see Figure 15
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 ns min V
S1
= V
S2
= 2 V, see Figure 16
Off Isolation –67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–87 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 17
Channel-to-Channel Crosstalk –62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 18
Bandwidth −3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 19
C
S
(Off) 7 pF typ f = 1 MHz
C
D
, C
S
(On) 27 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 3.3 V
Digital Inputs = 0 V or 3 V
I
DD
0.001 μA typ
1.0 μA max
1
Temperature range is B Version, −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
ADG779
Rev. A | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
V
DD
to GND −0.3 V to +7 V
Analog, Digital Inputs
1
−0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
Peak Current, S or D
100 mA (pulsed at 1 ms,
10% duty cycle max)
Continuous Current, S or D 30 mA
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
SC70 Package, Power Dissipation 315 mW
θ
JA
Thermal Impedance 332°C/W
θ
JC
Thermal Impedance 120°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
Reflow Soldering (Pb-free)
Peak Temperature 260 (+0/−5)°C
Time at Peak Temperature 10 sec to 40 sec
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 4. Truth Table
ADG779 IN Switch S1 Switch S2
0 On Off
1 Off On
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
P1-P3P4-P6P7-P9P10-P12P13-P13

ADG779BKSZ-REEL7

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Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs IC 2.5 Ohms 5.5V CMOS SPDT 2:1 Mux
Lifecycle:
New from this manufacturer.
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