FM28V020
256-Kbit (32 K × 8) F-RAM Memory
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 001-86204 Rev. *F Revised August 12, 2015
256-Kbit (32 K × 8) F-RAM Memory
Features
■ 256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32 K × 8
❐ High-endurance 100 trillion (10
14
) read/writes
❐ 151-year data retention (see the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Page mode operation
❐ Advanced high-reliability ferroelectric process
■ SRAM compatible
❐ Industry-standard 32 K × 8 SRAM pinout
❐ 70-ns access time, 140-ns cycle time
■ Superior to battery-backed SRAM modules
❐ No battery concerns
❐ Monolithic reliability
❐ True surface mount solution, no rework steps
❐ Superior for moisture, shock, and vibration
❐ Resistant to negative voltage undershoots
■ Low power consumption
❐ Active current 5 mA (typ)
❐ Standby current 90 A (typ)
■ Low-voltage operation: V
DD
= 2.0 V to 3.6 V
■ Industrial temperature: –40 C to +85 C
■ Packages:
❐ 28-pin small outline integrated circuit (SOIC) package
❐ 28-pin thin small outline package (TSOP) Type I
❐ 32-pin thin small outline package (TSOP) Type I
■ Restriction of hazardous substances (RoHS) compliant
Functional Overview
The FM28V020 is a 32 K × 8 nonvolatile memory that reads and
writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing and high
write endurance make the F-RAM superior to other types of
memory.
The FM28V020 operation is similar to that of other RAM devices
and therefore, it can be used as a drop-in replacement for a
standard SRAM in a system. Read and write cycles may be
triggered by CE
or simply by changing the address. The F-RAM
memory is nonvolatile due to its unique ferroelectric memory
process. These features make the FM28V020 ideal for
nonvolatile memory applications requiring frequent or rapid
writes.
The device is available in a 28-pin SOIC, 28-pin TSOP I and
32-pin TSOP I surface mount packages. Device specifications
are guaranteed over the industrial temperature range –40 °C to
+85 °C.
For a complete list of related documentation, click here.
Address Latch
CE
Control
Logic
WE
Row Decoder
A
I/O Latch & Bus DriverOE
DQ
32 K x 8
F-RAM Array
. . .
Column Decoder
. . .
14-3
A
2-0
7-0
A
14-0