139037 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.8 — 11 November 2013
139038 11 of 48
NXP Semiconductors
SL3ICS1002/1202
UCODE G2XM and G2XL
10. Characteristics
10.1 Wafer characteristics
[1] Power to process a Query command
[2] Measured with a 50 source impedance
[3] At minimum operating power
[4] Values measured for a 40 kHz phase reserval command under matched conditions
10.2 Package characteristics
[1] Measured with network analyzer at 915 MHz; values at 0.5 dBm after peak
max
of on-set of die, measured in the center of the pads.
Table 6. Wafer characteristics
Symbol Parameter Conditions Min Typ Max Unit
Memory characteristics
t
RET
EEPROM data retention T
amb
55 C50--year
N
WE
EEPROM write endurance T
amb
55 C 100000 - - cycle
Interface characteristics
P
tot
total power dissipation - 30 mW
f
oper
operating frequency 840 - 960 MHz
P
min
minimum operating power supply
[1][2]
--15 -dBm
C
i
input capacitance (parallel)
[3]
- 0.88 - pF
Q quality factor (Im (Z
chip
) / Re (Z
chip)
)
[3]
-9 --
Z impedance (915 MHz) - 22 - j195 -
- modulated jammer suppression 1.0 MHz
[4]
-- 4 -dB
- unmodulated jammer suppression 1.0 MHz
[4]
-- 4 -dB
Table 7. Package interface characteristics
Symbol Parameter Conditions Min Typ Max Unit
Interface characteristics SOT1122
C
i
input capacitance (parallel)
[1]
- 1.02 - pF
Z SOT1122 impedance (915 MHz) - 18.6 - j171.2 -
