139037 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.8 — 11 November 2013
139038 8 of 48
NXP Semiconductors
SL3ICS1002/1202
UCODE G2XM and G2XL
8. Mechanical specification
8.1 Wafer specification
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BL-ID document number: 1093**”.
8.1.1 Wafer
• Designation: each wafer is scribed with batch number and
wafer number
• Diameter: 200 mm (8”)
• Thickness: 150 m ± 15 m
• Number of pads 4
• Pad location: non diagonal/ placed in chip corners
• Distance pad to pad RFN-RFP 333.0 µm
• Distance pad to pad TP1-RFN: 351.0 µm
• Process: CMOS 0.14 µm
• Batch size: 25 wafers
• Dies per wafer: 120.000
8.1.2 Wafer backside
• Material: Si
• Treatment: ground and stress release
• Roughness: R
a
max. 0.5 m, R
t
max. 5 m
8.1.3 Chip dimensions
• Die size without scribe: 0.414 mm x 0.432 mm = 0.178 mm
2
• Scribe line width:
x-dimension:56.4 m (width is measured on top metal layer)
y-dimension: 56.4 m (width is measured on top metal layer)
8.1.4 Passivation on front
• Type Sandwich structure
• Material: PE-Nitride (on top)
• Thickness: 1.75 m total thickness of passivation
