LTC4253/LTC4253A
19
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APPLICATIONS INFORMATION
TIMER commences charging C
T
(trace 4) while the analog
current limit loop maintains the fault current at 100mV/R
S
,
which in this case is 5A (trace 2). Note that the backplane
voltage (trace 1) sags under load. Timer pull-up is accel-
erated by V
OUT
. When C
T
reaches 4V, GATE turns off, the
PWRGD signals pull high, the load current drops to zero
and the backplane rings up to over 100V. The transient
associated with the GATE turn-off can be controlled with
a snubber to reduce ringing and a transient voltage sup-
pressor (such as Diodes Inc. SMAT70A) to clip off large
spikes. The choice of RC for the snubber is usually done
experimentally. The value of the snubber capacitor is usu-
ally chosen between 10 to 100 times the MOSFET C
OSS
.
The value of the snubber resistor is typically between 3Ω
to 100Ω.
A low impedance short on one card may influence the
behavior of others sharing the same backplane. The ini-
tial glitch and backplane sag as seen in Figure 5 trace1,
can rob charge from output capacitors on the adjacent
card. When the faulty card shuts down, current flows in
to refresh the capacitors. If LTC4253/LTC4253A are used
by the other cards, they respond by limiting the inrush
current to a value of V
ACL
/R
S
. If C
T
is sized correctly, the
capacitors will recharge long before C
T
times out.
Figure 5. Output Short-Circuit Behavior of LTC4253
Sense
The SENSE pin is monitored by the circuit breaker (CB)
comparator, the analog current limit (ACL) amplifier, and
the fast current limit (FCL) comparator. Each of these three
measures the potential of SENSE relative to V
EE
. When
SENSE exceeds 50mV, the CB comparator activates the
200µA TIMER pull-up. At 100mV (60mV for the LTC4253A)
the ACL amplifier servos the MOSFET current, and at
200mV the FCL comparator abruptly pulls GATE low in
an attempt to bring the MOSFET current under control. If
any of these conditions persists long enough for TIMER to
charge C
T
to 4V (see Equation3), the LTC4253/LTC4253A
shut down and pull GATE low.
If the SENSE pin encounters a voltage greater than V
ACL
,
the ACL amplifier will servo GATE downwards in an attempt
to control the MOSFET current. Since GATE overdrives the
MOSFET in normal operation, the ACL amplifier needs time
to discharge GATE to the threshold of the MOSFET. For a
mild overload the ACL amplifier can control the MOSFET
current, but in the event of a severe overload the current
may overshoot. At SENSE = 200mV the FCL comparator
takes over, quickly discharging the GATE pin to near V
EE
potential. FCL then releases, and the ACL amplifier takes
over. All the while TIMER is running. The effect of FCL is
to add a nonlinear response to the control loop in favor
of reducing MOSFET current.
Owing to inductive effects in the system, FCL typically
overcorrects the current limit loop, and GATE undershoots.
A zero in the loop (resistor R
C
in series with the gate
capacitor) helps the ACL amplifier to recover.
SHORT-CIRCUIT OPERATION
Circuit behavior arising from a load side low impedance
short is shown in Figure 5. Initially the current overshoots
the analog current limit level of V
SENSE
=200mV (trace 2)
as the GATE pin works to bring V
GS
under control (trace3).
The overshoot glitches the backplane in the negative direc-
tion and when the current is reduced to 100mV/R
S
, the
backplane responds by glitching in the positive direction.
GATE
0.5ms
10V
SENSE
0.5ms
200mV
48RTN
0.5ms
50V
TIMER
0.5ms
5V
4253 F05
SUPPLY RING OWING
TO CURRENT OVERSHOOT
SUPPLY RING OWING
TO MOSFET TURN-OFF
ONSET OF OUTPUT
SHORT-CIRCUIT
FAST CURRENT
LIMIT
C
TIMER
RAMP
LATCH OFF
TRACE 1
TRACE 2
TRACE 3
TRACE 4
ANALOG
CURRENT LIMIT
LTC4253/LTC4253A
20
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MOSFET SELECTION
The external MOSFET switch must have adequate safe op-
erating area (SOA) to handle short-circuit conditions until
TIMER times out. These considerations take precedence
over DC current ratings. A MOSFET with adequate SOA for
a given application can always handle the required current
but the opposite may not be true. Consult the manufacturers
MOSFET data sheet for safe operating area and effective
transient thermal impedance curves.
MOSFET selection is a 3-step process by assuming the
absence of soft-start capacitor. First, R
S
is calculated and
then the time required to charge the load capacitance is
determined. This timing, along with the maximum short-
circuit current and maximum input voltage, defines an
operating point that is checked against the MOSFETs
SOA curve.
To begin a design, first specify the required load current
and Ioad capacitance, I
L
and C
L
. The circuit breaker cur-
rent trip point (V
CB
/R
S
) should be set to accommodate
the maximum load current. Note that maximum input
current to a DC/DC converter is expected at V
SUPPLY(MIN)
.
R
S
is given by:
R
S
=
V
CB(MIN)
I
L(MAX)
(8)
where V
CB(MIN)
= 40mV (45mV for the LTC4253A) repre-
sents the guaranteed minimum circuit breaker threshold.
During the initial charging process, the LTC4253/LTC4253A
may operate the MOSFET in current limit, forcing (V
ACL
)
between 80mV to 120mV (V
ACL
is 54mV to 66mV for the
LTC4253A) across R
S
. The minimum inrush current is
given by:
I
INRUSH(MIN)
=
V
ACL(MIN)
R
S
(9)
Maximum short-circuit current limit is calculated using
the maximum V
SENSE
. This gives
I
SHORTCIRCUIT(MAX)
=
V
ACL(MAX)
R
S
(10)
The TIMER capacitor C
T
must be selected based on the
slowest expected charging rate; otherwise TIMER might
time out before the load capacitor is fully charged. A value
for C
T
is calculated based on the maximum time it takes
the load capacitor to charge. That time is given by:
t
CL(CHARGE)
=
C V
I
=
C
L
V
SUPPLY(MAX)
I
INRUSH(MIN)
(11)
The maximum current flowing in the DRAIN pin is given by:
I
DRN(MAX)
=
V
SUPPLY(MAX)
V
DRNCL
R
D
(12)
Approximating a linear charging rate, I
DRN
drops from
I
DRN(MAX)
to zero, the I
DRN
component in Equation (3)
can be approximated with 0.5 I
DRN(MAX)
. Rearranging
the equation, TIMER capacitor C
T
is given by:
C
T
=
t
CL(CHARGE)
(200µA + 4 I
DRN(MAX)
)
4V
(13)
Returning to Equation (3), the TIMER period is calcu-
lated and used in conjunction with V
SUPPLY(MAX)
and
I
SHORTCIRCUIT(MAX)
to check the SOA curves of a prospec-
tive MOSFET.
As a numerical design example for the LTC4253, consider
a 30W load, which requires 1A input current at 36V. If
V
SUPPLY(MAX)
= 72V and C
L
= 100µF, R
D
= 1MΩ, Equation
(8) gives R
S
=40mΩ; Equation (13) gives C
T
= 414nF.
To account for errors in R
S
, C
T
, TIMER current (200µA),
TIMER threshold (4V), R
D
, DRAIN current multiplier and
DRAIN voltage clamp (V
DRNCL
), the calculated value should
be multiplied by 1.5, giving the nearest standard value of
C
T
=680nF.
If a short-circuit occurs, a current of up to 120mV/40mΩ=3A
will flow in the MOSFET for 6.3ms as dictated by C
T
= 680nF
in Equation (3). The MOSFET must be selected based on
this criterion. The IRF530S can handle 100V and 3A for
10ms and is safe to use in this application.
APPLICATIONS INFORMATION
LTC4253/LTC4253A
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Computing the maximum soft-start capacitor value during
soft-start to a load short is complicated by the nonlinear
MOSFETs SOA characteristics and the R
SS
C
SS
response.
An overconservative but simple approach begins with the
maximum circuit breaker current, given by:
I
CB(MAX)
=
V
CB(MAX)
R
S
(14)
where V
CB(MAX)
is 60mV (55mV for the LTC4253A).
From the SOA curves of a prospective MOSFET, determine
the time allowed, t
SOA(MAX)
. C
SS
is given by:
C
SS
=
t
SOA(MAX)
0.916 R
SS
for the LTC4253
C
SS
=
t
SOA(MAX)
2.48 R
SS
for the LTC4253A
(15)
In the above example, 60mV/40mΩ gives 1.5A. t
SOA
for
the IRF530S is 40ms. From Equation (15), C
SS
= 437nF.
Actual board evaluation showed that C
SS
= 100nF was ap-
propriate. The ratio ( R
SS
C
SS
) to t
CL(CHARGE)
is a good
gauge as large ratios may result in the time-out period
expiring prematurely. This gauge is determined empirically
with board level evaluation.
SUMMARY OF DESIGN FLOW
To summarize the design flow, consider the application
shown in Figure 3 for the LTC4253A. It was designed for
80W and C
L
=100µF.
Calculate maximum load current: 80W/43V = 1.86A;
allowing for 83% converter efficiency, I
IN(MAX)
= 2.2A.
Calculate R
S
: from Equation (8) R
S
= 20mΩ.
Calculate I
SHORT-CIRCUIT(MAX)
: from Equation (10)
I
SHORTCIRCUIT(MAX)
= 3.3A.
Select a MOSFET that can handle 3.3A at 71V: IRF530S.
Calculate C
T
: from Equation (13) C
T
= 302nF. Select
C
T
= 680nF, which gives the circuit breaker time-out
period t
MAX
= 5.9ms.
Consult MOSFET SOA curves: the IRF530S can handle 3.3A
at 100V for 8.3ms, so it is safe to use in this application.
Calculate C
SS
: using Equations (14) and (15) select
C
SS
=33nF.
FREQUENCY COMPENSATION
The LTC4253 typical frequency compensation network
for the analog current limit loop is a series R
C
(10Ω)
and C
C
connected from GATE to V
EE
. Figure 6 depicts the
relationship between the compensation capacitor C
C
and
the MOSFETs C
ISS
. The line in Figure 6 is used to select
a starting value for C
C
based upon the MOSFETs C
ISS
specification. Optimized values for C
C
are shown for sev-
eral popular MOSFETs. Differences in the optimized value
of C
C
versus the starting value are small. Nevertheless,
compensation values should be verified by board level
short-circuit testing.
As seen in Figure 5, at the onset of a short-circuit event,
the input supply voltage can ring dramatically due to series
inductance. If this voltage avalanches the MOSFET, current
continues to flow through the MOSFET to the output. The
analog current limit loop cannot control this current flow
and therefore the loop undershoots. This effect cannot be
eliminated by frequency compensation. A Zener diode is
required to clamp the input supply voltage and prevent
MOSFET avalanche.
Figure 6. Recommended Compensation
Capacitor C
C
vs MOSFET C
ISS
for the LTC4253
MOSFET C
ISS
(pF)
COMPENSATION CAPACITOR C
C
(nF)
4253 F06
60
50
40
30
20
10
0
0
2000
4000
6000
8000
IRF530
IRF540
IRF740
IRF3710
NTY100N10
APPLICATIONS INFORMATION

LTC4253CGN#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Hot Swap Voltage Controllers -48V Hot Swap Cntr w/ Sequencer
Lifecycle:
New from this manufacturer.
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