CY7C10612DV33-10ZSXIT

CY7C10612DV33
Document Number: 001-49315 Rev. *E Page 6 of 14
AC Switching Characteristics
Over the Operating Range
Parameter
[4]
Description
-10
Unit
Min Max
Read Cycle
t
power
V
CC
(typical) to the first access
[5]
100 s
t
RC
Read cycle time 10 ns
t
AA
Address to data valid 10 ns
t
OHA
Data hold from address change 3 ns
t
ACE
CE LOW to data valid 10 ns
t
DOE
OE LOW to data valid 5 ns
t
LZOE
OE LOW to low Z 1 ns
t
HZOE
OE HIGH to high Z
[6]
–5ns
t
LZCE
CE LOW to low Z
[6]
3–ns
t
HZCE
CE HIGH to high Z
[6]
–5ns
t
PU
CE LOW to power-up
[7]
0–ns
t
PD
CE HIGH to power-down
[7]
–10ns
t
DBE
Byte enable to data valid 5 ns
t
LZBE
Byte enable to low Z 1 ns
t
HZBE
Byte disable to high Z 5 ns
Write Cycle
[8, 9]
t
WC
Write cycle time 10 ns
t
SCE
CE LOW to write end 7 ns
t
AW
Address setup to write end 7 ns
t
HA
Address hold from write end 0 ns
t
SA
Address setup to write start 0 ns
t
PWE
WE pulse width 7–ns
t
SD
Data setup to write end 5.5 ns
t
HD
Data hold from write end 0 ns
t
LZWE
WE HIGH to low Z
[6]
3–ns
t
HZWE
WE LOW to high Z
[6]
–5ns
t
BW
Byte enable to end of write 7 ns
Notes
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, and input pulse levels of 0 to 3.0 V. Test conditions for the read cycle use
output loading shown in part a) of Figure 2 on page 5, unless specified otherwise.
5. t
POWER
gives the minimum amount of time that the power supply is at typical V
CC
values until the first memory access is performed.
6. t
HZOE
, t
HZCE
, t
HZWE
, t
HZBE
, t
LZOE
, t
LZCE
, t
LZWE
, and t
LZBE
are specified with a load capacitance of 5 pF as in (b) of Figure 2 on page 5. Transition is measured 200 mV from steady
state voltage.
7. These parameters are guaranteed by design and are not tested.
8. The internal write time of the memory is defined by the overlap of WE
, CE
= V
IL
. Chip enable must be active and WE and byte enables must be LOW to initiate a write,
and the transition of any of these signals can terminate. The input data setup and hold timing should be referenced to the edge of the signal that terminates the write.
9. The minimum write cycle time for Write Cycle No. 2 (WE
controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
CY7C10612DV33
Document Number: 001-49315 Rev. *E Page 7 of 14
Switching Waveforms
Figure 4. Read Cycle No. 1 (Address Transition Controlled)
[10, 11]
Figure 5. Read Cycle No. 2 (OE Controlled)
[11, 12]
PREVIOUS DATA VALID DATA OUT VALID
RC
t
AA
t
OHA
tRC
ADDRESS
DATA I/O
50%
50%
DATA OUT VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZBE
t
PD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA I/O
V
CC
SUPPLY
t
DBE
t
LZBE
t
HZCE
BHE, BLE
CURRENT
I
CC
I
SB
Notes
10. The device is continuously selected. OE
, CE
= V
IL
, BHE, BLE or both = V
IL
.
11. WE
is HIGH for read cycle.
12. Address valid before or similar to CE
transition LOW.
CY7C10612DV33
Document Number: 001-49315 Rev. *E Page 8 of 14
Figure 6. Write Cycle No. 1 (CE Controlled)
[13, 14]
Figure 7. Write Cycle No. 2 (WE Controlled, OE LOW)
[13, 14]
Switching Waveforms (continued)
t
HD
t
SD
t
SCE
t
SA
t
HA
t
AW
t
PWE
t
WC
BW
t
DATA I/O
ADDRESS
CE
WE
BHE, BLE
DATA IN VALID
t
HD
t
SD
t
SCE
t
HA
t
AW
t
PWE
t
WC
t
BW
t
SA
t
LZWE
t
HZWE
DATA I/O
ADDRESS
CE
WE
BHE,BLE
DATA IN VALID
Notes
13. Data I/O is high impedance if OE
, BHE, and/or BLE = V
IH
.
14. If CE
goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.

CY7C10612DV33-10ZSXIT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 16Mb 10ns 3.3V 1Mx16 Fast Async SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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