HTMS1x01_8x01 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.4 — 21 May 2015
152934 4 of 57
NXP Semiconductors
HTMS1x01; HTMS8x01
HITAG µ transponder IC
5. Ordering information
Table 2. Ordering information
Type number Package
Name Description Type Version
HTMS1001FUG/AM Wafer sawn, megabumped wafer, 150 µm, 8 inch, UV HITAG , 210 pF -
HTMS8001FUG/AM Wafer sawn, megabumped wafer, 150 µm, 8 inch, UV HITAG , 280pF -
HTMS8101FUG/AM Wafer sawn, megabumped wafer, 150 µm, 8 inch, UV HITAG Advanced,
280 pF
-
HTMS8201FUG/AM Wafer sawn, megabumped wafer, 150 µm, 8 inch, UV HITAG Advanced+,
280 pF
-
HTMS8001FTB/AF XSON3 plastic extremely thin small outline package; no
leads; 4 terminals; body 1 1.45 0.5 mm
HITAG , 280 pF SOT1122
HTMS8101FTB/AF XSON3 plastic extremely thin small outline package; no
leads; 4 terminals; body 1 1.45 0.5 mm
HITAG Advanced,
280 pF
SOT1122
HTMS8201FTB/AF XSON3 plastic extremely thin small outline package; no
leads; 4 terminals; body 1 1.45 0.5 mm
HITAG Advanced+,
280 pF
SOT1122
HTMS8001FTK/AF HVSON2 plastic thermal enhanced very thin small outline
package; no leads; 2 terminals; body 3 2
0.85 mm
HITAG , 280 pF SOT899-1
HTMS8101FTK/AF HVSON2 plastic thermal enhanced very thin small outline
package; no leads; 2 terminals; body 3 2
0.85 mm
HITAG Advanced,
280 pF
SOT899-1
HTMS8201FTK/AF HVSON2 plastic thermal enhanced very thin small outline
package; no leads; 2 terminals; body 3 2
0.85 mm
HITAG Advanced+,
280 pF
SOT899-1
HTMS1x01_8x01 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.4 — 21 May 2015
152934 5 of 57
NXP Semiconductors
HTMS1x01; HTMS8x01
HITAG µ transponder IC
6. Block diagram
The HITAG µ transponder ICs require no external power supply. The contactless interface
generates the power supply and the system clock via the resonant circuitry by inductive
coupling to the Read/Write Device (RWD). The interface also demodulates data
transmitted from the RWD to the HITAG µ transponder IC, and modulates the magnetic
field for data transmission from the HITAG µ transponder IC to the RWD.
Data are stored in a non-volatile memory (EEPROM). The EEPROM has a capacity of up
to 1760 bit and is organized in blocks.
Fig 1. Block diagram of HITAG µ transponder IC
001aai334
CLK
MOD
DEMOD
VREG
VDD
data
in
data
out
clock
R/W
ANALOGUE
RF INTERFACE
PAD
PAD
RECT
Cres
DIGITAL CONTROL
TRANSPONDER
ANTICOLLISION
READ/WRITE
CONTROL
ACCESS CONTROL
EEPROM INTERFACE
CONTROL
RF INTERFACE
CONTROL
EEPROM
SEQUENCER
CHARGE PUMP
HTMS1x01_8x01 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.4 — 21 May 2015
152934 6 of 57
NXP Semiconductors
HTMS1x01; HTMS8x01
HITAG µ transponder IC
7. Pinning information
Fig 2. HITAG µ - Mega bumps bondpad locations
Table 3. HITAG µ - Mega bumps dimensions
Description Dimension
(X) chip size 550 m
(Y) chip size 550 m
(1) pad center to chip edge 100.5 m
(2) pad center to chip edge 48.708 m
(3) pad center to chip edge 180.5 m
(4) pad center to chip edge 55.5 m
(5) pad center to chip edge 48.508 m
001aaj823
(4) (4)
(3)
(Y)
(X)
(2)
(5)
(6) (6)
(1)
(1)
LA LB

HTMS8201FTB/AF,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RFID Transponders RFID HTAG ADVANCED
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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