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NCP81038MNTWG

P1-P3P4-P6P7-P9P10-P11
NCP81038
http://onsemi.com
4
98 1110 12
15
16
17
18
19
5
4
3
2
1
2728 2526 24
AGND
7
6
13 14
20
21
23 22
GH1
BST1
VIN
SWN1
GL1/FSET
PGND1
CSP2
CSP1
CSN1
FB1
CSN2
BST2
GH2
SWN2
GL2
PGND2
COMP1
SKIP
VIN
Vout2
5.0 V / 6.0 V
5V_LDO
SKIP
EN2/SS2
EN1/SS1
PG
EN5
VOUT1
Vout1
10 K
10 K
LDO2_OUT
(3.3 V)
Figure 2. Application Circuit
3.3 mH
22 mFx2
3.3 V / 6.0 A
0.1 mF
0.1 mF
FB2
COMP2
LDO2_OUT
LDO2_EN
5V_LDOEN
5V_LDOOUT
5V_LDOBYP
Table 2. ABSOLUTE MAXIMUM RATINGS (Note 1)
VIN to GND, 5V_LDOEN to GND
−0.3 V (DC) to 28 V −1.0 V for T < 100 n
SWN1, SWN2 to GND −0.6 V to 28 V, −10.0 V for T < 20 ns
BST1, BST2 to GND −0.6 V to 34 V
GH1, GH2 to GND −0.6 V to 34 V, −5.0 V for T < 100 ns
PGND1, PGND2 −0.3 V to 0.3 V
All other pin −0.3 V to 6.0 V, −1.0 V for T < 100 ns
Operating Temperature Range, T
A
0°C to +85°C
Junction Temperature, T
J
−40°C to +150°C
Storage Temperature Range, T
S
−55°C to +150°C
Pkg Power Dissipation (TA = +25°C), P
D
(Note 2)
2.45 W max
R
q
JA
= 51°C/W
R
q
J−Lead
= 26°C/W
R
q
J−BoardTop
= 3.2°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Operation at −40°C to 0°C guaranteed by design, not production tested.
2. These data are based on JEDEC JESD51.7 highly conductive PCB multiple layer PCB (2 power and/or 2 ground planes 76 mm x 76 mm
1 oz each) connected by 20 thermal vias. 100 sq mm Cu heat spreader, 2 oz.
NCP81038
http://onsemi.com
5
Table 3. ELECTRICAL CHARACTERISTICS
(VIN = 12 V, Vout = 5.0 V, TA = +25°C for typical value; 0°C < TA < 85°C for min/max values unless noted otherwise)
Parameter
Symbol Test Conditions Min Typ Max Units
POWER SUPPLY
Input Supply Voltage VIN 5.5 28 V
INTERNAL LDO OUTPUT
5V_LDOOUT Voltage VIN =12 V, I
5V_LDOOUT
= 60 mA 4.85 5.0 5.15 V
5V_LDOOUT Current VIN =12 V, EN1 = EN2 = 0 100 mA
5V_LDO Switch to Bypass Threshold 4.7 4.95 V
5V_LDOOUT to 5V_IDOBYP Impedance LDOBYP = 5 V 1.0
W
Hysteresis 100 200 mV
LDO2_OUT Voltage
LDO2_EN = VCC, VIN = 15 V,
Load Current = 10 mA
11.4 12 12.6 V
LDO2_EN = 1/2 VCC, VIN = 15 V,
Load Current = 10 mA
3.2 3.3 3.46 V
LDO2_OUT Current 10 15 mA
SUPPLY CURRENT
BSTx Quiescent Current
I
BST
V
FB
= 1.5 V, EN = 5.0
(No Switching), GH and GL are open
0.3 mA
BSTx Shutdown Supply Current I
BST_SD
EN = 0, BST = 5 V, SWN = 0 6.0
mA
Vin Pin Supply Current Iload = 0 2.0 mA
Shutdown Current I
VIN_SD
EN1, EN2, LDOEN, LDO2_EN = 0 5.0
mA
EN1, EN2, LDOEN = 5 V,
LDO2_EN = 5 V
1.15
mA
EN1, EN2 = 0, LDOEN = 5 V,
LDO2_EN = 2.5 V
1.57
mA
EN1, EN2 = 0, LDOEN = 5 V,
LDO2_EN = 0
1.11
mA
OSCILLATOR
Oscillator Frequency
Fsw
Rset = 1.8 k 270 300 330 KHz
Rset = 9.1 k 340 400 460 KHz
Rset = 16 k 540 600 660 KHz
Oscillator Frequency Accuracy ±10 %
ERROR AMPLIFIER
Open Loop DC Gain (Note 3)
80 dB
Open Loop Unity Gain Bandwidth (Note 3) F
0dB,EA
10 15 MHz
Open Loop Phase Margin (Note 3) 60 deg
Input Bias Current (Note 3) −200 200 nA
Input Offset Voltage (Note 3) V+ = V− = 0.8 V −1.0 1.0 mV
Slew Rate COMP pin to GND = 10 pF 2.5
V/ms
Maximum Output Voltage 10 mV of overdrive, I
SOURCE
= 2.0 mA 3.3 V
Minimum Output Voltage 10 mV of overdrive, I
SINK
= 2.0 mA 0.3 V
Output Source Current 10 mV of overdrive, V
out
= 3.5 V 2.0
mA
Output Sink Current 10 mV of overdrive, V
out
= 1.0 V 2.0
mA
3. Guaranteed by Design
4. Parameters are for design only, not for product test.
NCP81038
http://onsemi.com
6
Table 3. ELECTRICAL CHARACTERISTICS
(VIN = 12 V, Vout = 5.0 V, TA = +25°C for typical value; 0°C < TA < 85°C for min/max values unless noted otherwise)
Parameter UnitsMaxTypMinTest ConditionsSymbol
FEEDBACK VOLTAGE
Reference Voltage
V
REF
792 800 808 mV
Feedback Voltage Line Regulation 5V_LDOOUT = 4.5 V ~ 5.5 V 0.25 %/V
DIFFERENTIAL CURRENT SENSE AMPLIFIER
CSP and CSN Common−mode Input
Voltage Range
Refer to AGND −0.2 5.5 V
Current Sense Input to Output Gain (CSP)−(CSN) = 10 mV 200
mA/V
Differential Input Voltage Range −60 60 mV
OVER CURRENT PROTECTION
OCP Threshold Voltage
V(CSP)−V(CSN) @ 25°C 35 40 45 mV
V(CSP)−V(CSN) @ 0 ~ 85°C 34 46 mV
OCP Trigger Clock Tick After EN, latch off after trigger # clocks 16
Short Circuit OCP Threshold Voltage 60 mV
GATE DRIVER
GH Pull−High Resistance
RH_GH Source, V(BST−GH) = 0.1 2.5
W
GH Pull−Low Resistance RL_GH Sink, V(GH−SWN) = 0.1 V 1.5
W
GL Pull−High Resistance RH_GL Source, V(VCC−GL) = 0.1 V 2.0
W
GL Pull−Low Resistance RL_GL Sink, V(GL−PGND) = 0.1 V 1.0
W
Dead Time
GL off to GH on 10 20 30 ns
GH off to GL on 10 20 30 ns
VOLTAGE MONITOR
VCC Start Threshold
3.7 4.2 4.4 V
VCC UVLO Hysteresis 100 200 300 mV
Power Good Threshold
PG in from lower 91.5 95 97.5 %
PG hysteresis 5.0 %
Power Good High Delay After soft start is done 500
ms
Power Good Low Delay 1.5
ms
Power Good Sink Current PG = 0.4 V 2.5 5.0 mA
Output Overvoltage Rising Threshold After VCC POR, with respect to VFB 106 110 118 %Vref
Overvoltage Fault Blanking Time 1.5
ms
Output Under-Voltage Trip Threshold
After soft start, with respect to VFB 45 50 55 %Vref
Under-voltage Protection Blanking Time
t
ss
ms
Under−voltage Protection Delay 2.0 ms
PWM
Minimum Controllable ON Time
50 ns
Minimum OFF Time 100 150 ns
PWM Ramp Offset 0.36 0.4 0.44 V
PWM Ramp Amplitude
VIN = 5 V 1.25 V
VIN = 12 V 3.0 V
PWM Comparator Propagation Delay 10 mV to 20 mV overdrive 25 30 ns
3. Guaranteed by Design
4. Parameters are for design only, not for product test.
P1-P3P4-P6P7-P9P10-P11

NCP81038MNTWG

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
Switching Controllers SYNCHRONOUS BUCK CONTROLL
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