1997 Sep 03 11
Philips Semiconductors Product specification
Low voltage transmission circuits with
dialler interface
TEA1062; TEA1062A
CHARACTERISTICS
I
line
= 11 to 140 mA; V
EE
= 0 V; f = 800 Hz; T
amb
=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies LN and V
CC
(pins 1 and 13)
V
LN
voltage drop over circuit between LN
and V
EE
MIC inputs open-circuit
I
line
=1mA − 1.6 − V
I
line
=4mA − 1.9 − V
I
line
= 15 mA 3.55 4.0 4.25 V
I
line
= 100 mA 4.9 5.7 6.5 V
I
line
= 140 mA −−7.5 V
∆V
LN
/∆T variation with temperature I
line
=15mA −−0.3 − mV/K
V
LN
voltage drop over circuit between LN
and V
EE
with external resistor R
VA
I
line
=15mA
R
VA
(LN to REG) = 68 kΩ− 3.5 − V
R
VA
(REG to SLPE) = 39 kΩ− 4.5 − V
I
CC
supply current V
CC
= 2.8 V − 0.9 1.35 mA
V
CC
supply voltage available for peripheral
circuitry
I
line
= 15 mA; MUTE = HIGH
TEA1062 I
p
= 1.2 mA 2.2 2.7 − V
I
p
=0mA − 3.4 − V
V
CC
supply voltage available for peripheral
circuitry
I
line
= 15 mA; MUTE = LOW
TEA1062A I
p
= 1.2 mA 2.2 2.7 − V
I
p
=0mA − 3.4 − V
Microphone inputs MIC− and MIC+ (pins 6 and 7)
Z
i
input impedance
differential between MIC− and MIC+ − 64 − kΩ
single-ended MIC− or MIC+ to V
EE
− 32 − kΩ
CMRR common mode rejection ratio − 82 − dB
G
v
voltage gain MIC+ or MIC− to LN I
line
= 15 mA; R7 = 68 kΩ 50.5 52.0 53.5 dB
∆G
vf
gain variation with frequency
referenced to 800 Hz
f = 300 and 3400 Hz −±0.2 − dB
∆G
vT
gain variation with temperature
referenced to 25 °C
without R6; I
line
= 50 mA;
T
amb
= −25 and +75 °C
−±0.2 − dB
DTMF input (pin 11)
|Z
i
| input impedance − 20.7 − kΩ
G
v
voltage gain from DTMF to LN I
line
= 15 mA; R7 = 68 kΩ 24.0 25.5 27.0 dB
∆G
vf
gain variation with frequency
referenced to 800 Hz
f = 300 and 3400 Hz −±0.2 − dB
∆G
vT
gain variation with temperature
referenced to 25 °C
I
line
= 50 mA;
T
amb
= −25 and +75 °C
−±0.2 − dB
