1997 Sep 03 7
Philips Semiconductors Product specification
Low voltage transmission circuits with
dialler interface
TEA1062; TEA1062A
Sidetone suppression
The anti-sidetone network, R1//Z
line
, R2, R3, R8, R9 and
Z
bal
, (see Fig.4) suppresses the transmitted signal in the
earpiece. Maximum compensation is obtained when the
following conditions are fulfilled:
(1)
(2)
If fixed values are chosen for R1, R2, R3 and R9, then
condition (1) will always be fulfilled when |R8//Z
bal
| << R3.
To obtain optimum sidetone suppression, condition (2) has
to be fulfilled which results in:
Where k is a scale factor;
The scale factor k, dependent on the value of R8, is
chosen to meet the following criteria:
compatibility with a standard capacitor from the E6 or
E12 range for Z
bal
•Z
bal
//R8 << R3 fulfilling condition (a) and thus
ensuring correct anti-sidetone bridge operation
•Z
bal
+ R8 >> R9 to avoid influencing the transmit gain.
In practise Z
line
varies considerably with the line type and
length. The value chosen for Z
bal
should therefore be for
an average line length thus giving optimum setting for
short or long lines.
R9 R2× R1 R3
R8 Z
bal
×
R8 Z
bal
+
-------------------------
+



×=
Z
bal
Z
bal
R8+
-------------------------
Z
line
Z
line
R1+
--------------------------
=
Z
bal
R8
R1
--------
Z
line
kZ
line
×=×=
k
R8
R1
--------
=
E
XAMPLE
The balance impedance Z
bal
at which the optimum
suppression is present can be calculated by:
Suppose Z
line
= 210 + (1265 //140 nF) representing a
5 km line of 0.5 mm diameter, copper, twisted-pair cable
matched to 600 (176 /km; 38 nF/km).
When k = 0.64 then R8 = 390 ;
Z
bal
= 130 + (820 //220 nF).
The anti-sidetone network for the TEA1060 family shown
in Fig.4 attenuates the signal received from the line by
32 dB before it enters the receiving amplifier.
The attenuation is almost constant over the whole
audio-frequency range.
Figure 5 shows a conventional Wheatstone bridge
anti-sidetone circuit that can be used as an alternative.
Both bridge types can be used with either resistive or
complex set impedances. (More information on the
balancing of anti-sidetone bridges can be obtained in our
publication
“Applications Handbook for Wired telecom
systems, IC03b”
, order number 9397 750 00811.)
1997 Sep 03 8
Philips Semiconductors Product specification
Low voltage transmission circuits with
dialler interface
TEA1062; TEA1062A
Fig.4 Equivalent circuit of TEA1060 family anti-sidetone bridge.
handbook, full pagewidth
MSA500 - 1
IR
R3
R8
SLPE
R9
Z
line
V
EE
Z
bal
i
m
R
t
R1 R2
LN
Fig.5 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
bo
ok, full pagewidth
MSA501 - 1
IR
R8
SLPE
R9
R1
LN
Z
line
V
EE
Z
bal
R
A
i
m
R
t
1997 Sep 03 9
Philips Semiconductors Product specification
Low voltage transmission circuits with
dialler interface
TEA1062; TEA1062A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Mostly dependent on the maximum required T
amb
and on the voltage between LN and SLPE (see Figs 6, 7 and 8).
2. Calculated for the maximum ambient temperature specified (T
amb
=75°C) and a maximum junction temperature of
125 °C.
HANDLING
This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with
“MIL STD 883C - method 3015”
.
THERMAL CHARACTERISTICS
Note
1. Mounted on glass epoxy board 28.5 × 19.1 × 1.5 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
LN
positive continuous line voltage 12 V
V
LN(R)
repetitive line voltage during switch-on
or line interruption
13.2 V
V
LN(RM)
repetitive peak line voltage for a 1 ms
pulse per 5 s
R9 = 20 ; R10 = 13 ;
see Fig.18
28 V
I
line
line current R9 = 20 ; note 1 140 mA
V
I
input voltage on all other pins positive input voltage V
CC
+ 0.7 V
negative input voltage −−0.7 V
P
tot
total power dissipation R9 = 20 ; note 2
TEA1062; TEA1062A 666 mW
TEA1062M1; TEA1062AM1 617 mW
TEA1062T; TEA1062AT 454 mW
T
amb
operating ambient temperature 25 +75 °C
T
stg
storage temperature 40 +125 °C
T
j
junction temperature 125 °C
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air
TEA1062; TEA1062A 75 K/W
TEA1062M1; TEA1062AM1 81 K/W
TEA1062T; TEA1062AT (note 1) 110 K/W

TEA1062AT/C4,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC TRANSMISSION LV 16-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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