Data Sheet HMC7992
Rev. 0 | Page 3 of 13
SPECIFICATIONS
V
DD
= 3.3 V to 5.0 V, V
CTL
= 0 V/V
DD
, T
A
= 25°C, 50 Ω system, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INSERTION LOSS 0.1 GHz to 2.0 GHz 0.6 0.9 dB
2.0 GHz to 4.0 GHz 0.7 1.1 dB
4.0 GHz to 6.0 GHz 1.0 1.5 dB
ISOLATION
RFC to RF1to RF4 (Worst Case) 0.1 GHz to 2.0 GHz 40 45 dB
2.0 GHz to 4.0 GHz 32 37 dB
4.0 GHz to 6.0 GHz 25 30 dB
RETURN LOSS
On State 0.1 GHz to 2.0 GHz 25 dB
2.0 GHz to 4.0 GHz 24 dB
4.0 GHz to 6.0 GHz 17 dB
Off State 0.1 GHz to 2.0 GHz 7 dB
0.4 GHz to 1.0 GHz
15
1.0 GHz to 6.0 GHz 20 dB
SWITCHING SPEED
Rise Time and Fall Time t
RISE
, t
FAL L
30 ns
On Time and Off Time t
ON
, t
OFF
10%/90% RF
OUT
150 ns
RADIO FREQUENCY (RF) SETTLING TIME 50% V
CTL
to 0.1 dB margin of final RF
OUT
320 ns
INPUT POWER 0.1 GHz to 6.0 GHz
1 dB Compression P1dB V
DD
= 5 V 35 dB
V
DD
= 3.3 V
33
0.1 dB Compression P0.1dB V
DD
= 5 V 33 dB
V
DD
= 3.3 V 31 dB
INPUT THIRD-ORDER INTERCEPT
IIP3
0.1 GHz to 6.0 GHz, two-tone input power =
14 dBm/tone
V
DD
= 5 V 58 dBm
V
DD
= 3.3 V 56 dBm
RECOMMENDED OPERATING CONDITIONS
Bias Voltage Range V
DD
3.0 5.4 V
Control Voltage Range V
CTL
0 V
DD
V
Case Temperature Range T
CASE
−40 +105 °C
Maximum RF Input Power
0.1 GHz to 6.0 GHz
Through Path V
DD
/V
CTL
= 5 V, T
CASE
= 105°C 30 dBm
V
DD
/V
CTL
= 5 V, T
CASE
= −40°C to +85°C 33 dBm
V
DD
/V
CTL
= 3.3 V, T
CASE
= 105°C 29 dBm
V
DD
/V
CTL
= 3.3 V, T
CASE
= −40°C to +85°C 32 dBm
Terminated Path V
DD
/V
CTL
= 3.3 V to 5 V, T
CASE
= 105°C 21 dBm
V
DD
/V
CTL
= 3.3 V to 5 V, T
CASE
= 85°C 24 dBm
V
DD
/V
CTL
= 3.3 V to 5 V, T
CASE
= 25°C 27 dBm
V
DD
/V
CTL
= 3.3 V to 5 V, T
CASE
= −40°C 27 dBm
Hot Switching V
DD
/V
CTL
= 3.3 V to 5 V, T
CASE
= 105°C 24 dBm
V
DD
/V
CTL
= 3.3 V to 5 V, T
CASE
= −40°C to +85°C 27 dBm
HMC7992 Data Sheet
Rev. 0 | Page 4 of 13
DIGITAL CONTROL VOLTAGES
T
CASE
= −40°C to +105°C, unless otherwise specified.
Table 2.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
INPUT CONTROL VOLTAGE <1 µA typical
Low Voltage V
IL
0 8.5 V V
DD
= 3.3 V (±5% V
DD
)
0 1.2 V V
DD
= 5 V 5% V
DD
)
High Voltage V
IH
1.15 3.3 V V
DD
= 3.3 V (±5% V
DD
)
1.55 5.0 V V
DD
= 5 V 5% V
DD
)
BIAS AND SUPPLY CURRENT
Table 3.
Parameter Symbol Min Typ Max Unit
SUPPLY CURRENT I
DD
V
DD
= 3.3 V 0.16 0.20 mA
V
DD
= 5 V 0.18 0.23 mA
Data Sheet HMC7992
Rev. 0 | Page 5 of 13
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Bias Voltage Range (V
DD
) −0.3 V to +5.5 V
Control Voltage Range (A, B) −0.5 V to V
DD
+ (+0.5 V)
RF Input Power,
1
3.3 V to 5 V (see
Figure 2 and Figure 3)
Through Path 34 dBm
Terminated Path 28 dBm
Hot Switching
30 dBm
Channel Temperature
135°C
Storage Temperature Range −65°C to +150°C
Maximum Peak Reflow Temperature
(MSL3)
260°C
Thermal Resistance (Channel to
Package Bottom)
Through Path 115°C
Terminated Path 200°C
ESD Sensitivity
Human Body Model (HBM) 2 kV (Class 2)
Charged Device Model (CDM) 1.25 kV
1
For recommended operating conditions, see Table 1.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
36
34
32
30
28
26
24
0.1
1
FREQUENC
Y (GHz)
10
MAXIMUM RF INPUT POWER (dBm)
THROUGH AMR
TERMINATED AMR
13714-002
Figure 2. Maximum RF Input Power vs. Frequency
35
29
POWER DERA
TING (dBm)
31
33
27
25
23
21
19
0.1 1
FREQUENCY
(GHz)
10
THROUGH (AT 85°C)
THROUGH (A
T 105°C)
TERMINA
TED (AT 85°C)
TERMINATED (AT 105°C)
13714-003
Figure 3. Power Derating vs. Frequency
ESD CAUTION

HMC7992LP3DETR

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Switch ICs SP4T Switch
Lifecycle:
New from this manufacturer.
Delivery:
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