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AUIRF2804S-7P

P1-P3P4-P6P7-P9P10-P11
AUIRF2804S-7P
D
2
Pak 7 Pin
AUIRF2804S-7P
G D S
Gate Drain Source
Base Part Number Package Type
Standard Pack
Complete Part Number
Form Quantity
AUIRF2804S-7P
D
2
Pak-7PIN
Tube 50
AUIRF2804S-7P
Tape and Reel Left 800
AUIRF2804S-7TRL
V
DSS
40V
R
DS(on)
max.
1.6m
I
D (Silicon Limited)
320A
I
D (Package Limited)
240A
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 320
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 230
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 240
I
DM
Pulsed Drain Current 1360
P
D
@T
C
= 25°C Maximum Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 630
mJ
E
AS (tested)
Single Pulse Avalanche Energy Tested Value 1050
I
AR
Avalanche Current See Fig.12a,12b,15,16 A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
AUTOMOTIVE GRADE
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.50
°C/W
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
JA
Junction-to-Ambient ––– 62
R
JA
Junction-to-Ambient (PCB Mount, steady state) ––– 40
1 2015-11-11
HEXFET
®
Power MOSFET
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUIRF2804S-7P
2 2015-11-11
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, I
D
= 1.0mA
R
DS(on)
SMD Static Drain-to-Source On-Resistance
––– 1.2 1.6
m
V
GS
= 10V, I
D
= 160A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Transconductance 220 ––– ––– S V
DS
= 10V, I
D
= 160A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
= 40V, V
GS
= 0V
––– ––– 250 V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -200 V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge ––– 170 260
nC
I
D
= 160A
Q
gs
Gate-to-Source Charge ––– 63 –––
V
DS
= 32V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 71 –––
V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 17 –––
ns
V
DD
= 20V
t
r
Rise Time ––– 150 –––
I
D
= 160A
t
d(off)
Turn-Off Delay Time ––– 110 –––
R
G
= 2.6
t
f
Fall Time ––– 100 –––
V
GS
= 10V
L
D
Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––– 6930 –––
V
GS
= 0V
C
oss
Output Capacitance ––– 1750 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 970 –––
pF
ƒ = 1.0 MHz, See Fig. 5
C
oss
Output Capacitance ––– 5740 –––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance 1570
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 2340 –––
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 320
A
MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current
––– ––– 1360
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 160A, V
GS
= 0V
t
rr
Reverse Recovery Time
––– 43 65
ns
T
J
= 25°C, I
F
= 160A, V
DD
= 20V
Q
rr
Reverse Recovery Charge
––– 48 72
nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 240A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L=0.049mH, R
G
= 25, I
AS
= 160A, V
GS
=10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as Coss while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting T
J
= 25°C, L= 0.049mH, R
G
= 25, I
AS
= 160A, V
GS
=10V.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note # AN-994.
R
is measured at T
J
of approximately 90°C.
AUIRF2804S-7P
3 2015-11-11
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Typical Forward Trans conductance
vs. Drain Current
Fig. 1 Typical Output Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
)
V
DS
= 20V
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
0 20 40 60 80 100 120 140
I
D,
Drain-to-Source Current (A)
0
40
80
120
160
200
240
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 10V
380µs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P11

AUIRF2804S-7P

Mfr. #:
Buy AUIRF2804S-7P
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms
Lifecycle:
New from this manufacturer.
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