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AUIRF2804S-7P

P1-P3P4-P6P7-P9P10-P11
AUIRF2804S-7P
4 2015-11-11
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
14000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 50 100 150 200 250 300
Q
G
Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
VDS= 20V
I
D
= 160A
0.00.40.81.21.62.02.4
V
SD
, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
0 1 10 100 1000
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
DC
AUIRF2804S-7P
5 2015-11-11
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
50
100
150
200
250
300
350
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 160A
V
GS
= 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
i (sec)
0.1951 0.000743
0.3050 0.008219
J
J
1
1
2
2
R
1
R
1
R
2
R
2
C
C
Ci= iRi
Ci= iRi
AUIRF2804S-7P
6 2015-11-11
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
t
p
V
(BR)DSS
I
AS
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 14. Threshold Voltage vs. Temperature
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
500
1000
1500
2000
2500
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
21A
33A
BOTTOM
160A
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 1.0A
I
D
= 1.0mA
I
D
= 250µA
P1-P3P4-P6P7-P9P10-P11

AUIRF2804S-7P

Mfr. #:
Buy AUIRF2804S-7P
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms
Lifecycle:
New from this manufacturer.
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