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SI5913DC-T1-E3

P1-P3P4-P6P7-P9P10-P12
www.vishay.com
4
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5913DC
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
3
6
9
12
15
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=10V thru 4 V
V
GS
=2V
V
GS
=3V
0.00
0.04
0.08
0.12
0.16
0.20
0 3 6 9 12 15
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 10 V
V
GS
= 4.5 V
0
2
4
6
8
10
0.0 1.5 3.0 4.5 6.0 7.5 9.0
I
D
= 3.7 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 16 V
V
DS
=10V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.4 0.8 1.2 1.6 2.0
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
C
rss
0
100
200
300
400
500
600
048 12 16 20
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.7
0.9
1.1
1.3
1.5
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
= 4.5 V
V
GS
= 10 V, I
D
= 3.7 A
I
D
= 3.2 A
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
5
Vishay Siliconix
Si5913DC
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Soure-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.1
10
T
J
= 25 °C
0.5
0.7
0.9
1.1
1.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
V (V)
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.04
0.08
0.12
0.16
0.20
036912
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
= 3.7 A
0
5
10
15
20
25
30
10
-4
10
-3
10
-2
10
-1
110
Time (s)
Power (W)
Safe Operating Area, Junction-to-Case
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
10 ms
1ms
100 µs
Limited by R *
DS(on)
BVDSS
Limited
100 ms
1 s, 10 s
DC
www.vishay.com
6
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5913DC
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
6
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power Derating, Junction-to-Foot
0.0
0.8
1.6
2.4
3.2
4.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
P1-P3P4-P6P7-P9P10-P12

SI5913DC-T1-E3

Mfr. #:
Buy SI5913DC-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
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