SI5913DC-T1-E3

Vishay Siliconix
Si5913DC
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
7
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 95 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
1
0.1
0.01
0.2
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
110
-1
10
-4
0.05
0.02
Single Pulse
0.1
www.vishay.com
8
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5913DC
SCHOTTKY TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Reverse Current vs. Junction Temperature
Capacitance
T
J
- Junction Temperature (°C)
- Reverse Current (mA)I
R
- 50 - 25 0 25 50 75 100 125 150
10
-8
10
-3
10
-1
V
R
= 15 V
10
-7
10
-6
10
-5
10
-4
10
-2
V
R
= 10 V
V
R
= 20 V
0
50
100
150
200
250
0 4 8 12 16 20
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
Forward Diode Voltage
Single Pulse Power, Junction-to-Ambient
0.0 0.2 0.4 0.6 0.8 1.0
10
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)
I
S
T
J
= 150 °C
T
J
= 25 °C
0.01
0.1
1
0.001
0
4
8
12
16
20
Power (W)
Time (s)
1 10010
-2
10
-3
10
-4
1010
-1
Vishay Siliconix
Si5913DC
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
9
SCHOTTKY TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68920
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=105 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
1
0.1
0.01
0.2
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
110
-1
10
-4
0.05
0.02
Single Pulse
0.1

SI5913DC-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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