3©2015 Integrated Device Technology, Inc December 7, 2015
840004-11 Datasheet
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect product reliability.
DC Electrical Characteristics
Table 3A. Power Supply DC Characteristics, V
DD
= V
DDO
= 3.3V ± 5%, T
A
= 0°C to 70°C
Table 3B. LVCMOS/LVTTL DC Characteristics, V
DD
= V
DDO
= 3.3V ± 5%, T
A
= 0°C to 70°C
NOTE 1: Outputs terminated with 50 to V
DDO
/2. See Parameter Measurement Information section. Load Test Circuit diagram.
Table 4. Crystal Characteristics
NOTE: Characterized using an 18pF parallel resonant crystal.
Item Rating
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD
+ 0.5V
Outputs, V
O
-0.5V to V
DDO
+ 0.5V
Package Thermal Impedance,
JA
73.2C/W (0 lfpm)
Storage Temperature, T
STG
-65C to 150C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
DD
Core Supply Voltage 3.135 3.3 3.465 V
V
DDA
Analog Supply Voltage 3.135 3.3 3.465 V
V
DDO
Output Supply Voltage 3.135 3.3 3.465 V
I
DD
Power Supply Current 100 mA
I
DDA
Analog Supply Current 12 mA
I
DDO
Output Supply Current No Load 10 mA
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
IH
Input High Voltage 2 V
DD
+ 0.3 V
V
IL
Input Low Voltage -0.3 0.8 V
I
IH
Input High Current OE, F_SEL V
DD
= V
IN
= 3.465V 5 µA
I
IL
Input Low Current OE, F_SEL V
DD
= 3.465V, V
IN
= 0V -150 µA
V
OH
Output High Voltage; NOTE 1 V
DDO
= 3.3V ± 5% 2.6 V
V
OL
Output Low Voltage; NOTE 1 V
DDO
= 3.3V ± 5% 0.5 V
Parameter Test Conditions Minimum Typical Maximum Units
Mode of Oscillation Fundamental
Frequency 25 MHz
Equivalent Series Resistance (ESR) 50
Shunt Capacitance 7pF
Drive Level 1mW
