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IPS021S

P1-P3P4-P6P7-P9P10-P12
Features
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection
IPS021
(
S
)
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60148-K
Description
The IPS021/IPS021S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET
®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165
o
C
or when the drain current reaches 5A. These devices
restart once the input is cycled. The avalanche capa-
bility is significantly enhanced by the active clamp
and covers most inductive load demagnetizations.
Packages
Product Summary
R
ds(on)
150mΩ (max)
V
clamp
50V
I
shutdown
5A
T
on/
T
off
1.5µs
3-Lead D
2
Pak
IPS021S
3-Lead TO-220
IPS021
www.irf.com 1
Typical Connection
S
Q
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
IPS021(S)
2 www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. Notes.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (T
Ambient
= 25
o
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70 µm copper thickness.
Symbol Parameter Min. Max. Units Test Conditions
V
ds
Maximum drain to source voltage — 47
V
in
Maximum input voltage -0.3 7
I
in, max
Maximum IN current -10 +10 mA
I
sd cont.
Diode max. continous current
(1)
(rth=62
o
C/W) IPS021 — 2.8
(rth=10
o
C/W) IPS021 — 8
(rth=80
o
C/W) IPS021S — 2.2
I
sd pulsed
Diode max. pulsed current
(1)
— 10A
P
d Maximum power dissipation
(1)
(rth=62
o
C/W) IPS021 — 2
(rth=80
o
C/W) IPS021S — 1.56
ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0Ω, L=10µH
T
stor.
Max. storage temperature -55
150
T
j
max. Max. junction temperature. -40
150
T
lead
Lead temperature (soldering, 10 seconds) — 300
V
W
A
kV
o
C
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
th
1 Thermal resistance free air — 60 —
R
th
2 Thermal resistance junction to case — 5
—
R
th
1 Thermal resistance with standard footprint — 80 —
R
th
2 Thermal resistance with 1" square footprint — 50 —
R
th
3 Thermal resistance junction to case — 5 —
Thermal Characteristics
TO-220
D
2
PAK (SMD220)
o
C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
V
ds
(max) Continuous drain to source voltage
—
35
V
IH
High level input voltage 4 6
V
IL
Low level input voltage
0 0.5
I
ds
Continuous drain current — 1.8 A
Tamb=85
o
C (
TAmbient = 85
o
C, IN = 5V, rth = 60
o
C/W, Tj = 125
o
C)
R
in
Recommended resistor in series with IN pin 0.5
5 k
Ω
T
r-in (max)
Max recommended rise time for IN signal (see fig. 2) — 1
µ
S
F
r
-I
sc
(2)
Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
V
IPS021(S)
www.irf.com 3
Symbol Parameter Min. Typ. Max. Units Test Conditions
T
sd
Over temperature threshold
—
165
—
o
C See fig. 1
I
sd
Over current threshold 4 5.5 7 A See fig. 1
V
reset
IN protection reset threshold 1.5 2.3 3 V
T
reset
Time to reset protection
2
10
40
µs V
in
= 0V, Tj = 25
o
C
EOI_OT Short circuit energy (see application note)
—
400
—
µJV
cc
= 14V
Protection Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
ds(on)
ON state resistance T
j
= 25
o
C 100 130 150
T
j
= 150
o
C — 220 280
I
dss 1
Drain to source leakage current 0 0.01 25 V
cc
= 14V, T
j
= 25
o
C
I
dss 2
Drain to source leakage current 0 0.1 50 V
cc
= 40V, T
j
= 25
o
C
V clamp 1
Drain to source clamp voltage 1
48 54
56
I
d
= 20mA (see Fig.3 & 4)
V clamp 2 Drain to source clamp voltage 2 50
56 60
V
in
clamp
IN to source clamp voltage
7 8 9.5
I
in
= 1 mA
V
th
IN threshold voltage 1 1.5 2
I
d
=
50mA,
V
ds
= 14V
I
in
,
-on
ON state IN positive current
25 90
200 V
in
= 5V
I
in, -off
ON state IN positive current
50 130
250 V
in
= 5V
over-current triggered
Static Electrical Characteristics
Standard footprint 70 µm copper thickness. T
j
= 25
o
C (unless otherwise specified.)
mΩ
V
in
= 5V, I
ds
= 1A
I
d
=I
shutdown
(see Fig.3 & 4)
µA
V
Switching Electrical Characteristics
V
cc
= 14V, Resistive Load = 10Ω, Rinput = 50Ω, 100µs
pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter Min. Typ. Max. Units Test Conditions
T
on
Turn-on delay time
0.15
0.5
1
T
r
Rise time
0.4
0.9
2
T
rf
Time to (final R
ds(on)
1.3)
2
6
12
T
off
Turn-off delay time
0.8
2
3.5
T
f
Fall time
0.5
1.3
2.5
Q
in
Total gate charge
—
3.3
—
nC V
in
= 5V
See figure 2
See figure 2
µs
µA
P1-P3P4-P6P7-P9P10-P12

IPS021S

Mfr. #:
Buy IPS021S
Manufacturer:
Infineon Technologies
Description:
Gate Drivers IR_HSS-LSS-GATEDRIVER
Lifecycle:
New from this manufacturer.
Delivery:
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