Philips Semiconductors
PHD22NQ20T
N-channel TrenchMOS™ standard level FET
Product data Rev. 01 — 08 March 2004 5 of 12
9397 750 12882
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V
T
j
=25°C 200 - - V
T
j
= −55 °C 178 - - V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9
T
j
=25°C 234V
T
j
= 175 °C 1--V
T
j
= −55 °C - - 4.4 V
I
DSS
drain-source leakage current V
DS
= 160 V; V
GS
=0V
T
j
=25°C - 0.05 10 µA
T
j
= 175 °C - - 500 µA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
= 0 V - 10 100 nA
R
DSon
drain-source on-state resistance V
GS
=10V; I
D
=12A;Figure 7 and 8
T
j
=25°C - 98 120 mΩ
T
j
= 175 °C - 274 336 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge I
D
= 15 A; V
DD
= 160 V; V
GS
=10V;
Figure 13
- 30.8 - nC
Q
gs
gate-source charge - 5 - nC
Q
gd
gate-drain (Miller) charge - 11.3 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 25 V; f = 1 MHz;
Figure 11
-1380-pF
C
oss
output capacitance - 145 - pF
C
rss
reverse transfer capacitance - 50 - pF
t
d(on)
turn-on delay time V
DD
= 100 V; R
L
= 5.6 Ω;
V
GS
=10V;R
G
= 5.6 Ω
-10-ns
t
r
rise time -30-ns
t
d(off)
turn-off delay time - 30 - ns
t
f
fall time -37-ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 20 A; V
GS
=0V;Figure 12 - 0.86 1.2 V
t
rr
reverse recovery time I
S
= 20 A; dI
S
/dt = −100 A/µs; V
GS
= 0 V - 140 - ns
Q
r
recovered charge - 680 - nC
