Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
PHD22NQ20T,118
P1-P3
P4-P6
P7-P9
P10-P12
Philips Semiconductors
PHD22NQ20T
N-channel T
renchMOS™ standard le
vel FET
Product data
Rev
. 01 — 08 Marc
h 2004
7 of 12
9397 750 12882
© Koninklijk
e Philips Electronics N.V
. 2004. All r
ights reserved.
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold v
oltage as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage.
V
GS
= 0 V
; f = 1 MHz
Fig 11.
Input, output and rever
se transfer capacitances as a function of drain-source v
oltage; typical values.
03aa32
0
1
2
3
4
5
-60
0
60
120
180
T
j
(
°
C)
V
GS
(th
)
(V
)
max
mi
n
typ
03aa35
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
02
46
V
GS
(V
)
I
D
(A
)
max
typ
mi
n
03ap91
10
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V
)
C
(pF
)
C
iss
C
oss
C
rss
Philips Semiconductors
PHD22NQ20T
N-channel T
renchMOS™ standard le
vel FET
Product data
Rev
. 01 — 08 Marc
h 2004
8 of 12
9397 750 12882
© Koninklijk
e Philips Electronics N.V
. 2004. All r
ights reserved.
T
j
=2
5
°
C and 175
°
C; V
GS
=0V
I
D
= 15 A; V
DD
= 40 V
, 100 V
and 160 V
Fig 12.
Source (diode f
orward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values.
Fig 13.
Gate-source v
oltage as a function of gate
charge; typical v
alues.
03ap90
0
5
10
15
20
25
0
0.3
0.6
0
.9
1
.2
V
SD
(V
)
I
S
(A
)
T
j
= 25
°
C
175
°
C
V
GS
= 0 V
03ap92
0
2
4
6
8
10
0
1
02
0
3
04
0
Q
G
(nC
)
V
GS
(V
)
I
D
=
15 A
T
j
= 25
°
C
V
DD
= 40 V
100 V
160 V
Philips Semiconductors
PHD22NQ20T
N-channel T
renchMOS™ standard le
vel FET
Product data
Rev
. 01 — 08 Marc
h 2004
9 of 12
9397 750 12882
© Koninklijk
e Philips Electronics N.V
. 2004. All r
ights reserved.
7.
P
ac
kage outline
Fig 14.
SO
T428 (D-P
AK).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT428
TO-252
SC-63
99-09-13
01-12-11
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b
2
E
1
wA
M
bc
b
1
L
1
L
13
2
D
D
1
H
E
L
2
Note
1. Measured from heatsink back to lead.
e
1
e
A
A
2
A
A
1
y
seating plane
mounting
base
A
1
(1)
D
b
E
1
EH
E
w
y
max.
A
2
b
2
b
1
c
D
1
min.
ee
1
L
1
min.
L
2
L
A
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
0.2
mm
2.38
2.22
0.65
0.45
0.93
0.73
0.89
0.71
1.1
0.9
5.46
5.26
0.4
0.2
6.22
5.98
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.9
0.5
6.73
6.47
4.0
2.95
2.55
P1-P3
P4-P6
P7-P9
P10-P12
PHD22NQ20T,118
Mfr. #:
Buy PHD22NQ20T,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 200V 21.1A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
PHD22NQ20T,118
