NB3N51054
www.onsemi.com
8
Table 13. ATTRIBUTES
Characteristic Value
Internal Pull−up Resistor (SCLK, SDATA)
50 kW
ESD Protection Human Body Model 2 kV
Moisture Sensitivity, Indefinite Time Out of Dray Pack (Note 1) Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Transistor Count 132,000
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 14. ABSOLUTE MAXIMUM RATING (Note 2)
Symbol
Parameter Rating Unit
V
DD
Positive power supply with respect to GND +4.6 V
V
I
Input Voltage with respect to device GND −0.5 V to V
DD
+ 0.5 V V
T
A
Operating Temperature Range −40 to +85 °C
T
STG
Storage temperature −65 to +150 °C
T
SOL
Max. Soldering Temperature (10 sec) 265 °C
q
JA
Thermal Resistance (Junction−to−ambient) 0 lfpm
(Note 3) 500 lfpm
65
57
°C/W
q
JC
Thermal Resistance (Junction−to−case) 50 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
Table 15. DC ELECTRICAL CHARACTERISTICS (V
DD
= 3.3 V ± 5%, GND = 0 V, T
A
= −40°C to 85°C, Note 4)
Symbol Parameter Min Typ Max Unit
V
DD
Power Supply Voltage 3.135 3.3 3.465 V
I
DD
Power Supply Current, spread OFF, all outputs ON 125 130 mA
I
OFF
Power Supply Current when all outputs are set OFF through I
2
C, spread OFF 50 mA
V
IH
Input HIGH Voltage (XIN/CLKIN) 2.0 V
DD
+ 0.3 V
V
IL
Input LOW Voltage (XIN/CLKIN) GND − 0.3 0.8 V
I
IH
Input HIGH Current (SCLK/SDATA), V
DD
= V
IN
= 3.465 V 10
mA
I
IL
Input LOW Current (SCLK/SDATA), V
DD
= 3.465 V, V
IN
= 0 V −150
mA
V
OH
Output HIGH Voltage for HCSL Output (Note 5) 660 850 mV
V
OL
Output LOW Voltage for HCSL Output (Note 5) −150 mV
V
CROSS
Crossing Voltage Magnitude (Absolute) for HCSL Output (Notes 5, 6, 7) 250 550 mV
DV
CROSS
Change in Magnitude of V
CROSS
for HCSL Output (Notes 5, 6, 8) 150 mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measurement taken with outputs terminated with R
S
= 33.2 W, R
L
= 49.9 W, with test load capacitance of 2 pF and current biasing resistor
set at R
REF
= 475 W. See Figure 6. Guaranteed by characterization.
5. Measurement taken from single-ended waveform
6. Measured at crossing point where the instantaneous voltage value of the rising edge of CLKx+ equals the falling edge of CLKx-.
7. Refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing. Refers to all crossing points
for this measurement.
8. Defined as the total variation of all crossing voltage of rising CLKx+ and falling CLKx-. This is maximum allowed variance in the V
CROSS
for
any particular system.
