OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRFB3307ZPBF

P1-P3P4-P6P7-P9P10-P11
IRFB/S/SL3307ZPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.0 0.5 1.0 1.5 2.0
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Temperature ( °C )
65
70
75
80
85
90
95
100
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 5mA
20 30 40 50 60 70 80
V
DS,
Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
E
n
e
r
g
y
(
μ
J
)
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
DC
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
600
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 15A
26A
BOTTOM 75A
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
140
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
IRFB/S/SL3307ZPbF
www.irf.com 5
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.1164 0.000088
0.3009 0.001312
0.2313 0.009191
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci i/Ri
Ci= τi/Ri
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle =
Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
25
50
75
100
125
150
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
I
D
= 75A
IRFB/S/SL3307ZPbF
6 www.irf.com
Fig. 17 - Typical Recovery Current vs. di
f
/dt
Fig 16. Threshold Voltage vs. Temperature
Fig. 19 - Typical Stored Charge vs. di
f
/dtFig. 18 - Typical Recovery Current vs. di
f
/dt
Fig. 20 - Typical Stored Charge vs. di
f
/dt
-75 -50 -25 0 25 50 75 100 125 150 175 200
T
J
, Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 150μA
I
D
= 250μA
I
D
= 1.0mA
I
D
= 1.0A
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
5
10
15
20
I
R
R
(
A
)
I
F
= 48A
V
R
= 64V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
20
100
180
260
340
420
Q
R
R
(
A
)
I
F
= 48A
V
R
= 64V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
5
10
15
20
I
R
R
(
A
)
I
F
= 72A
V
R
= 64V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
20
100
180
260
340
420
Q
R
R
(
A
)
I
F
= 72A
V
R
= 64V
T
J
= 25°C
T
J
= 125°C
P1-P3P4-P6P7-P9P10-P11

IRFB3307ZPBF

Mfr. #:
Buy IRFB3307ZPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet