IRFS3307ZPBF Datasheet IRFS3307ZTRLPBF, IRFS3307ZTRRPBF, IRFB3307ZPBF | P1-P3

08/19/11

Benefits

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

www.irf.com 1

IRFB3307ZPbF

IRFS3307ZPbF

IRFSL3307ZPbF

Applications

l High Efficiency Synchronous Rectification in

SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

HEXFET

®

Power MOSFET

GDS

Gate Drain Source

S

D

G

D

S

G

D

S

D

G

TO-220AB

IRFB3307ZPbF

D

2

Pak

IRFS3307ZPbF

TO-262

IRFSL3307ZPbF

S

D

G

D

PD - 97214D

V

DSS

75V

R

DS(on)

typ.

4.6m

Ω

max.

5.8m

Ω

I

D (Silicon Limited)

128A

I

D (Package Limited)

120A

Absolute Maximum Ratings

Symbol

Parameter

Units

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

I

D

@ T

C

= 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

A

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V (Wire Bond Limited)

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage

V

dv/dt

Peak Diode Recovery

V/ns

T

J

Operating Junction and

°C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

E

AS (Thermally limited)

Single Pulse Avalanche Energy

mJ

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Energy

mJ

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R

θJC

Junction-to-Case

–––

0.65

R

θCS

Case-to-Sink, Flat Greased Surface , TO-220

0.50 ––– °C/W

R

θJA

Junction-to-Ambient, TO-220

––– 62

R

θ

JA

Junction-to-Ambient (PCB Mount) , D

2

Pak

–––

40

See Fig. 14, 15, 22a, 22b

140

230

6.7

-55 to + 175

± 20

1.5

10lbf

in (1.1N m)

300

Max.

128

90

512

120

IRFB/S/SL3307ZPbF

2 www.irf.com

Notes:

 Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 120A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

Jmax

, starting T

J

= 25°C, L = 0.050mH

R

G

= 25Ω, I

AS

= 75A, V

GS

=10V. Part not recommended for use

above this value.

S

D

G

 I

SD

≤ 75A, di/dt ≤ 1570A/μs, V

DD

≤ V

(BR)DSS

, T

J

≤ 175°C.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

 C

oss

eff. (TR) is a fixed capacitance that gives the same charging time

as C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

 C

oss

eff. (ER) is a fixed capacitance that gives the same energy as

C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

 R

θ

is measured at T

J

approximately 90°C.

Static @ T

J

= 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage

75

–––

V

Δ

V

(BR)DSS

/

Δ

T

J

Breakdown Voltage Temp. Coefficient

–––

0.094

–––

V/°C

R

DS(on)

Static Drain-to-Source On-Resistance

–––

4.6

5.8

m

Ω

V

GS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

R

G(int)

Internal Gate Resistance

–––

0.70 –––

Ω

I

DSS

Drain-to-Source Leakage Current

–––

20

μA

–––

250

I

GSS

Gate-to-Source Forward Leakage

–––

100

nA

Gate-to-Source Reverse Leakage

–––

-100

Dynamic @ T

J

= 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Units

gfs

Forward Transconductance

320

–––

S

Q

g

Total Gate Charge

–––

79

110

nC

Q

gs

Gate-to-Source Charge

–––

19

–––

Q

gd

Gate-to-Drain ("Miller") Charge

–––

24

–––

Q

sync

Total Gate Charge Sync. (Q

g

- Q

gd

)

–––

55

–––

t

d(on)

Turn-On Delay Time

–––

15

–––

ns

t

r

Rise Time

–––

64

–––

t

d(off)

Turn-Off Delay Time

–––

38

–––

t

f

Fall Time

–––

65

–––

C

iss

Input Capacitance

–––

4750

–––

pF

C

oss

Output Capacitance

–––

420

–––

C

rss

Reverse Transfer Capacitance

–––

190

–––

C

oss

eff. (ER)

Effective Output Capacitance (Energy Related)

–––

440

–––

C

oss

eff. (TR)

Effective Output Capacitance (Time Related)

–––

410

–––

Diode Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

I

S

Continuous Source Current

–––

128

A

(Body Diode)

I

SM

Pulsed Source Current

–––

512

(Body Diode)

V

SD

Diode Forward Voltage

–––

1.3

V

t

rr

Reverse Recovery Time

–––

33

50

ns

T

J

= 25°C

V

R

= 64V,

–––

39

59

T

J

= 125°C

I

F

= 75A

Q

rr

Reverse Recovery Charge

–––

42

63

nC

T

J

= 25°C

di/dt = 100A/μs

–––

56

84

T

J

= 125°C

I

RRM

Reverse Recovery Current

–––

2.2

–––

A

T

J

= 25°C

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

V

DS

= 50V, I

D

= 75A

I

D

= 75A

V

GS

= 20V

V

GS

= -20V

MOSFET symbol

showing the

V

DS

= 38V

Conditions

V

GS

= 10V

V

GS

= 0V

V

DS

= 50V

ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 60V

V

GS

= 0V, V

DS

= 0V to 60V

T

J

= 25°C, I

S

= 75A, V

GS

= 0V

integral reverse

p-n junction diode.

Conditions

V

GS

= 0V, I

D

= 250μA

Reference to 25°C, I

D

= 5mA

V

GS

= 10V, I

D

= 75A

V

DS

= V

GS

, I

D

= 150μA

V

DS

= 75V, V

GS

= 0V

V

DS

= 75V, V

GS

= 0V, T

J

= 125°C

I

D

= 75A

R

G

= 2.6

Ω

V

GS

= 10V

V

DD

= 49V

I

D

= 75A, V

DS

=0V, V

GS

= 10V

IRFB/S/SL3307ZPbF

www.irf.com 3

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM 4.5V

≤

60μs PULSE WIDTH

Tj = 25°C

4.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

4.5V

≤

60μs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM 4.5V

2 3 4 5 6 7 8

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 25V

≤

60μs PULSE WIDTH

1 10 100

V

DS

, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

-60 -40 -20 0 20 40 60 80 100120140160180

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 72A

V

GS

= 10V

0 102030405060708090

Q

G

,

Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= 60V

V

DS

= 38V

V

DS

= 15V

I

D

= 72A

IRFS3307ZPBF

IRFS3307ZPBF

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