6.42
IDT71342SA/LA
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore Industrial and Commercial Temperature Ranges
4
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1)
(VCC = 5.0V ± 10%)
NOTES:
1. 'X' in part number indicates power rating (SA or LA).
2. V
CC = 5V, TA = +25°C for typical, and parameters are not production tested.
3. f
MAX = 1/tRC = All inputs cycling at f = 1/tRC (except Output Enable). f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby ISB3.
71342X20
Com'l Only
71342X25
Com'l & Ind
71342X35
Com'l Only
Symbol Parameter Test Condition Version Typ.
(2)
Max. Typ.
(2)
Max. Typ.
(2)
Max. Unit
I
CC
Dynamic Operating Current
(Both Ports Active)
CE = V
IL
,
Outputs Disabled
SEM = Don't Care
f = f
MAX
(3)
COM'L SA
LA
170
170
280
240
160
160
280
240
150
150
260
200
mA
IND SA
LA
____
____
____
____
160
160
310
260
150
150
300
250
I
SB1
Standby Current
(Bo th Ports - TTL
Level Inputs)
CE
L
and CE
R
= V
IH
SEM
L
= SEM
R
> V
IH
f = f
MAX
(3)
COM'L SA
LA
25
25
80
80
25
25
80
50
25
25
75
45
mA
IND SA
LA
____
____
____
____
25
25
100
80
25
25
75
55
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and CE
"B"
= V
IH
Active Port Outputs Disabled,
f=f
MAX
(3)
COM'L SA
LA
105
105
180
150
95
95
180
150
85
85
170
140
mA
IND SA
LA
____
____
____
____
95
95
210
170
85
85
200
160
I
SB3
Full Standby Current (Both
Ports -
CMOS Level Inputs)
Both Ports CE
L
and
CE
R
> V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
SEM
L
= SEM
R
> V
CC
- 0.2V
f = 0
(3)
COM'L SA
LA
1.0
0.2
15
4.5
1.0
0.2
15
4.0
1.0
0.2
15
4.0
mA
IND SA
LA
____
____
____
____
1.0
0.2
30
10
1.0
0.2
30
10
I
SB4
Full Standby Current
(One Port -
CMOS Level Inputs)
One Port CE
"A"
or
CE
"B"
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
SEM
L
= SEM
R
> V
CC
- 0.2V
Active Port Outputs Disabled,
f = f
MAX
(3)
COM'L SA
LA
105
105
170
130
95
95
170
120
85
85
150
110
mA
IND SA
LA
____
____
____
____
95
95
210
190
85
85
190
130
2721 tbl 06a
71342X45
Com'l Only
71342X55
Com'l Only
71342X70
Com'l Only
Symbol Parameter Test Condition Version Typ.
(2)
Max. Typ.
(2)
Max. Typ.
(2)
Max. Unit
I
CC
Dynamic Operating Current
(Both Ports Active)
CE = V
IL
,
Outputs Disabled
SEM = Don't Care
f = f
MAX
(3)
COM'L SA
LA
140
140
240
200
140
140
240
200
140
140
240
200
mA
IND SA
LA
____
____
____
____
140
140
270
220
____
____
____
____
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
L
and CE
R
= V
IH
SEM
L
= SEM
R
> V
IH
f = f
MAX
(3)
COM'L SA
LA
25
25
70
40
25
25
70
40
25
25
70
40
mA
IND SA
LA
____
____
____
____
25
25
70
50
____
____
____
____
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and CE
"B"
= V
IH
Active Port Outputs Disabled,
f=f
MAX
(3)
COM'L SA
LA
75
75
160
130
75
75
160
130
75
75
160
130
mA
IND SA
LA
____
____
____
____
75
75
180
150
____
____
____
____
I
SB3
Full Standby Current (Both
Ports -
CMOS Level Inp uts)
Both Ports CE
L
and
CE
R
> V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
SEM
L
= SEM
R
> V
CC
- 0.2
V
f = 0
(3)
COM'L SA
LA
1.0
0.2
15
4.0
1.0
0.2
15
4.0
1.0
0.2
15
4.0
mA
IND SA
LA
____
____
____
____
1.0
2.0
30
10
____
____
____
____
I
SB4
Full Standby Current
(One Port -
CMOS Level Inp uts)
One Port CE
"A"
or
CE
"B"
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
SEM
L
= SEM
R
> V
CC
- 0.2V
Active Port Outputs Disabled,
f = f
MAX
(3)
COM'L SA
LA
75
75
150
100
75
75
150
100
75
75
150
100
mA
IND SA
LA
____
____
____
____
75
75
170
120
____
____
____
____
2721 tbl 06b
6.42
IDT71342SA/LA
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore Industrial and Commercial Temperature Ranges
5
Data Retention Characteristics
(LA Version Only) VLC = 0.2V, VHC = VCC - 0.2V
Data Rention Waveform
AC Test Conditions
Figure 2. Output Test Load
(for t
LZ, tHZ, tWZ, tOW)
*Including scope and jig
Figure 1. AC Output Test Load
NOTES:
1. V
CC = 2V, TA = +25°C, and are not production tested.
2. t
RC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
Symbol Parameter Test Condition Min. Typ.
(1 )
Max. Unit
V
DR
V
CC
for Data Re te ntio n
___
2.0
___
V
I
CCDR
Data Retention Current V
CC
= 2V, CE > V
HC
COM'L. & IND.
___
100 1500 µA
t
CD R
(3 )
Chip Deselect to Data Retention Time
SEM >
V
HC
V
IN
> V
HC
or < V
LC
0
___ ___
ns
t
R
(3 )
Operation Recovery Time t
RC
(2 )
___ ___
ns
2721 tbl 07
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns
1.5V
1.5V
Figures 1 and 2
2721 tbl 08
V
CC
CE
DATA RETENTION MODE
4.5V4.5V
V
DR
> 2V
V
DR
V
IH
V
IH
t
CDR
t
R
2721 drw 04
+5V
1250
30pF
775
DATA
OUT
2721 drw 05
,
+5V
1250
5pF *
775
DATA
OUT
2721 drw 06
,
6.42
IDT71342SA/LA
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore Industrial and Commercial Temperature Ranges
6
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
(5)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Ouput Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access SRAM, CE = V
IL, SEM = VIH. To access semaphore, CE = VIH, and SEM = VIL.
4. 'X' in part number indicates power rating (SA or LA).
5. Port-to-port delay through RAM cells from writing port to reading port, refer to “Timing Waveform of Write with Port-to-Port Read”.
71342X20
Com'l Only
71342X25
Com'l & Ind
71342X35
Com'l Only
UnitSymbol Parameter Min.Max.Min.Max.Min.Max.
READ CYCLE
t
RC
Read Cycle Time 20
____
25
____
35
____
ns
t
AA
Address Access Time
____
20
____
25
____
35 ns
t
ACE
Chip Enable Access Time
(3)
____
20
____
25
____
35 ns
t
AOE
Output Enable Access Time
____
15
____
15
____
20 ns
t
OH
Output Hold from Address Change 0
____
0
____
0
____
ns
t
LZ
Output Low-Z Time
(1,2)
0
____
0
____
0
____
ns
t
HZ
Output High-Z Time
(1,2)
____
15
____
15
____
20 ns
t
PU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2)
____
50
____
50
____
50 ns
t
SOP
SEM Flag Update Pulse (OE or SEM)
10
____
10
____
15
____
ns
t
WDD
Write Pulse to Data Delay
(4)
____
40
____
50
____
60 ns
t
DDD
Write Data Valid to Read Data Delay
(4)
____
30
____
30
____
35 ns
t
SAA
Semaphore Address Access Time
____ ____ ____
25
____
35 ns
2721 tbl 09a
71342X45
Com'l Only
71342X55
Com'l Only
71342X70
Com'l Only
UnitSymbol Parameter Min.Max.Min.Max.Min.Max.
READ CYCLE
t
RC
Read Cycle Time 45
____
55
____
70
____
ns
t
AA
Address Access Time
____
45
____
55
____
70 ns
t
ACE
Chip Enable Access Time
(3)
____
45
____
55
____
70 ns
t
AOE
Output Enable Access Time
____
25
____
30
____
40 ns
t
OH
Output Hold from Address Change 0
____
0
____
0
____
ns
t
LZ
Outp ut Low-Z Time
(1,2)
5
____
5
____
5
____
ns
t
HZ
Output High-Z Time
(1,2)
____
20
____
25
____
30 ns
t
PU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2)
____
50
____
50
____
50 ns
t
SOP
SEM Flag Update Pulse (OE or SEM)
15
____
20
____
20
____
ns
t
WDD
Write Pulse to Data Delay
(4)
____
70
____
80
____
90 ns
t
DDD
Write Data Valid to Read Data Delay
(4)
____
45
____
55
____
70 ns
t
SAA
Semaphore Address Access Time
____
45
____
55
____
70 ns
2721 tbl 09b

71342SA25PF

Mfr. #:
Manufacturer:
IDT
Description:
SRAM 32K (4KX8) CMOS DUAL PORT
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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