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KAF-1001-AAA-CB-B2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
KAF−1001
www.onsemi.com
7
TYPICAL PERFORMANCE CURVES
Figure 5. Typical Spectral Response
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
300 400 500 600 700 800 900 1000 1100 1200
Absolute Quantum Efficiency
Full Frame Image Sensor Spectral Response
Wavelength (nm)
KAF−1001: 24 mm Pixel
KAF−1401: 6.8 mm Pixel
Figure 5 shows a representative spectral response of front
side illuminated transparent gate full frame image sensors.
The KAF−1001 with 24 m m pixels has higher response than
the 6.8 mm pixel sensor at wavelengths greater than 750 nm
because it is constructed on a lower resistivity silicon
substrate. The resulting collection volume of each pixel
more efficiently collects signal generated deeper within the
silicon.
Most of the two phase CCD pixels are designed so that
each of the electrodes occupies half of the pixel area.
The KAF−1001 was not designed this way but instead is
designed with the transparent electrode occupying greater
than half the pixel area. This further improves the benefits
of the transparent gate.
Figure 6. Dark Current as a Function of Temperature
1
10
100
1000
−30 −20 −10 0 10 20 30
Temperature (5C)
Electrons/Pixel/Second
KAF−1001 Dark Current
KAF−1001
www.onsemi.com
8
DEFECT DEFINITIONS
Table 6. SPECIFICATIONS
Grade Point Defect Cluster Defect Column Defect
C1 20 2 0
C2 40 10 2
Point Defects
Dark: A pixel which deviates by more than 20% from
neighboring pixels when illuminated to 70% of saturation.
Bright: A pixel whose dark current exceeds 4,500 e
−
/pix/sec
at 25°C.
Cluster Defect
A grouping of not more than 5 adjacent point defects.
Column Defect
A grouping point defects along a single column (Dark
column).
A column that contains a pixel whose dark current
exceeds 150,000 e
−
/pix/sec at 25°C (Bright column).
A column that does not exhibit the minimum charge
capacity specification (Low Charge capacity).
A column that loses > 500 electrons when the array is
illuminated to a signal level of 2,000 e
−
/pix (Trap like
defects).
Neighboring Pixels
The surrounding 128 × 128 pixels or ±64 columns/rows.
Defect Separation
Defects are separated by no less than 3 pixels in any one
direction.
Figure 7. Active Pixel Region
1, 1024
1, 1
1024, 1024
1024, 1
All Pixels Subject to Detect Specification
KAF−1001
www.onsemi.com
9
OPERATION
Table 7. ABSOLUTE MAXIMUM RATINGS
Description Symbol Minimum Maximum Units Notes
Storage Temperature T
ST
−100 +80 °C At Device
Operating Temperature T
OP
−50 +50 °C At Device
Voltage All Clocks −16 +16 V V
SUB
= 0 V
Voltage OG 0 +8 V V
SUB
= 0 V
Voltage V
RD
, V
SS
, V
DD
, GUARD 0 +20 V V
SUB
= 0 V
Current Output Bias Current (I
DD
) − 10 mA
Capacitance Output Load Capacitance (C
LOAD
) − 10 pF
Frequency/Time
fV1, fV2 Pulse Width
8 −
ms
Frequency/Time
fH1, fH2
− 5 MHz
Frequency/Time
fR Pulse Width
20 − ns
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 8. DC BIAS OPERATING CONDITIONS
Description Symbol Minimum Nominal Maximum Units Pin Impedance Notes
Substrate V
SUB
0.0 0.0 0.0 V Common
Output Amplifier Supply V
DD
15.0 17.0 17.5 V
5pF, 2kW
1
Output Amplifier Return V
SS
1.4 2.0 2.1 V
5pF, 2kW
Reset Drain V
RD
11.5 12.0 12.5 V
5pF, 1MW
Output Gate OG 3.0 4.0 4.5 V
5 pF, 10 MW
Guard Ring GUARD 7.0 10.0 15.0 V
350 pF, 10 MW
Load Gate V
LG
V
SS
− 0.5 V
SS
V
SS
+ 1.0 V
1. V
DD
= 17 V for applications where the expected output voltage > 2.0 V. For applications where the expected useable output voltage is <2V,
V
DD
can be reduced to 15 V.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

KAF-1001-AAA-CB-B2

Mfr. #:
Buy KAF-1001-AAA-CB-B2
Manufacturer:
ON Semiconductor
Description:
Image Sensors FULL FRAME CCD IMAGE SENSOR
Lifecycle:
New from this manufacturer.
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