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PMF170XP,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
S
O
T
3
2
3
PMF170XP
20 V, 1 A P-channel Trench MOSFET
29 October 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Low R
DSon
•
Very fast switching
•
Trench MOSFET technology
3. Applications
•
Relay driver
•
High-speed line driver
•
High-side loadswitch
•
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - -20 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 - 12 V
I
D
drain current V
GS
= -4.5 V; T
amb
25 °C [1] - - -1 A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -1 A; T
j
= 25 °C - 175 200 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
NXP Semiconductors
PMF170XP
20 V, 1 A P-channel Trench MOSFET
PMF170XP All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 29 October 2013 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
1 2
3
SC-70 (SOT323)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMF170XP SC-70 plastic surface-mounted package; 3 leads SOT323
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
PMF170XP XD%
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - -20 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 12 V
V
GS
= -4.5 V; T
amb
25 °C [1] - -1 AI
D
drain current
V
GS
= -4.5 V; T
amb
= 100 °C [1] - -0.7 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - -4 A
[2] - 290 mWT
amb
= 25 °C
[1] - 360 mW
P
tot
total power dissipation
T
sp
= 25 °C - 1670 mW
T
j
junction temperature -55 150 °C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PMF170XP,115

Mfr. #:
Buy PMF170XP,115
Manufacturer:
Nexperia
Description:
MOSFET P-CH -20 V -1 A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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