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PMF170XP,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PMF170XP
20 V, 1 A P-channel Trench MOSFET
PMF170XP All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 29 October 2013 6 / 15
Symbol Parameter Conditions Min Typ Max Unit
V
GS
= -12 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nAI
GSS
gate leakage current
V
GS
= 12 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nA
V
GS
= -4.5 V; I
D
= -1 A; T
j
= 25 °C - 175 200 mΩ
V
GS
= -4.5 V; I
D
= -1 A; T
j
= 150 °C - 250 284 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -2.5 V; I
D
= -1 A; T
j
= 25 °C - 240 300 mΩ
g
fs
forward
transconductance
V
DS
= -5 V; I
D
= -1 A; T
j
= 25 °C - 1.9 - S
Dynamic characteristics
Q
G(tot)
total gate charge - 2.6 3.9 nC
Q
GS
gate-source charge - 0.63 - nC
Q
GD
gate-drain charge
V
DS
= -10 V; I
D
= -1 A; V
GS
= -4.5 V;
T
j
= 25 °C
- 0.53 - nC
C
iss
input capacitance - 280 - pF
C
oss
output capacitance - 43 - pF
C
rss
reverse transfer
capacitance
V
DS
= -10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 30 - pF
t
d(on)
turn-on delay time - 10 - ns
t
r
rise time - 16 - ns
t
d(off)
turn-off delay time - 31 - ns
t
f
fall time
V
DS
= -10 V; I
D
= -1 A; V
GS
= -4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 13 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -0.4 A; V
GS
= 0 V; T
j
= 25 °C - -0.7 -1.2 V
NXP Semiconductors
PMF170XP
20 V, 1 A P-channel Trench MOSFET
PMF170XP All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 29 October 2013 7 / 15
V
DS
(V)
0 - 4- 3- 1 - 2
017aaa303
- 2
- 1
- 3
- 4
I
D
(A)
0
V
GS
= - 3.5 V
- 4.5 V
- 3.0 V
- 2.5 V
- 1.8 V
- 2.0 V
- 1.5 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa129
V
GS
(V)
0.0 - 1.5- 1.0- 0.5
- 10
- 4
- 10
- 5
- 10
- 3
I
D
(A)
- 10
- 6
(2)(1) (3)
T
j
= 25 °C; V
DS
= -3 V
(1) minimum values
(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
-2.0 -4.0-3.5-2.5 -3.0
017aaa304
200
300
100
400
500
R
DSon
(mΩ)
0
(1)
(2)
(3)
(4)
(5)
T
j
= 25 °C
(1) V
GS
= -2.5 V
(2) V
GS
= -3.0 V
(3) V
GS
= -3.5 V
(4) V
GS
= -4.0 V
(5) V
GS
= -4.5 V
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 - 6- 4- 2
017aaa305
200
400
600
R
DSon
(mΩ)
0
(1)
(2)
I
D
= -1 A
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NXP Semiconductors
PMF170XP
20 V, 1 A P-channel Trench MOSFET
PMF170XP All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 29 October 2013 8 / 15
017aaa306
V
GS
(V)
0 - 3- 2- 1
- 2
- 1
- 3
- 4
I
D
(A)
0
(1)
(1)
(2)
(2)
V
DS
> I
D
× R
DSon
(1) T
j
= 25 °C
(2) T
j
= 150 °C
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
017aaa307
1.0
1.2
0.8
1.4
1.6
a
0.6
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
- 60 1801200 60
017aaa134
- 0.8
- 0.4
- 1.2
- 1.6
V
GS(th)
(V)
0.0
(1)
(2)
(3)
I
D
= -0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
017aaa308
V
DS
(V)
-10
-1
-10
2
-10-1
10
2
10
3
C
(pF)
10
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PMF170XP,115

Mfr. #:
Buy PMF170XP,115
Manufacturer:
Nexperia
Description:
MOSFET P-CH -20 V -1 A
Lifecycle:
New from this manufacturer.
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