IXYH16N250CV1HV Datasheet IXYH16N250CV1HV | P1-P3

V

CES

= 2500V

I

C110

= 16A

V

CE(sat)







4.0V

t

fi(typ)

= 250ns

DS100794A(5/17)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 2500 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 50 A

V

CE

= 0.8 • V

CES

,

V

GE

= 0V T

J

= 150C 4 mA

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 16A, V

GE

= 15V, Note 1 3.30 4.00 V

T

J

= 150C 4.75 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 2500 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 2500 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 38 A

I

C110

T

C

= 110°C 16 A

I

F110

T

C

= 110°C 14 A

I

CM

T

C

= 25°C, 1ms 126 A

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 10 I

CM

= 64 A

(RBSOA) Clamped Inductive Load 1500 V

P

C

T

C

= 25°C 500 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13/10 Nm/lb.in.

Weight 6g

High Voltage

XPT

TM

IGBT

w/ Diode

Advance Technical Information

Features



High Voltage Package



High Blocking Voltage



High Peak Current Capability



Low Saturation Voltage

Advantages



Low Gate Drive Requirement



High Power Density

Applications



Switch-Mode and Resonant-Mode

Power Supplies



Uninterruptible Power Supplies (UPS)



Laser Generators



Capacitor Discharge Circuits



AC Switches

IXYH16N250CV1HV

TO-247HV (IXYH)

C (Tab)

G

E

C

G = Gate C = Collector

E = Emitter Tab = Collector

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYH16N250CV1HV

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Reverse Diode (FRED)

(T

J

= 25°C, Unless Otherwise Specified) Characteristic Value

Symbol Test Conditions Min. Typ. Max.

V

F

5.0 V

T

J

= 150°C 4.8 V

I

RM

28 A

t

rr

165 ns

R

thJC

0.80 °C/W

I

F

= 16A, V

GE

= 0V, -di

F

/dt = 500A/μs,

V

R

= 1200V, T

J

= 150°C

I

F

= 16A,V

GE

= 0V, Note 1

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 16A, V

CE

= 10V, Note 1 11 18 S

R

Gi

Gate Input Resistance 5.8 

C

ie

s

1980 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 94 pF

C

res

28 pF

Q

g(on)

97 nC

Q

ge

I

C

= 16A, V

GE

= 15V, V

CE

= 0.5 • V

CES

13 nC

Q

gc

43 nC

t

d(on)

14 ns

t

ri

19 ns

E

on

4.75 mJ

t

d(off)

260 ns

t

fi

250 ns

E

of

f

3.90 mJ

t

d(on)

15 ns

t

ri

24 ns

E

on

5.80 mJ

t

d(off)

305 ns

t

fi

236 ns

E

off

4.40 mJ

R

thJC

0.30 °C/W

R

thCS

0.21 °C/W

Inductive load, T

J

= 25°C

I

C

= 16A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 10

Note 2

Inductive load, T

J

= 150°C

I

C

= 16A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 10

Note 2

TO-247HV Outline

PINS:

1 - Gate 2 - Emitter

3, 4 - Collector

E

R

A

Q

S

A3

e

D

c

b

A1

L1

D3

D1

D2

E2

E3

3X

2X

4X

3X

A2

b1

0P

E1

0P1

4

31 2

e1

L

IXYH16N250CV1HV

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

4

8

12

16

20

24

28

32

00.511.522.533.544.555.56

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

12V

10V

9V

8V

5V

7V

6V

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

50

100

150

200

250

0 4 8 1216202428

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

10V

8V

11V

12V

7V

6V

9V

14V

13V

Fig. 3. Output Characteristics @ T

J

= 150

o

C

0

4

8

12

16

20

24

28

32

012345678

V

CE

- Volts

I

C

- Amperes

8V

V

GE

= 15V

12V

10V

9V

5V

6V

7V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 16A

I

C

= 8A

I

C

= 32A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

2

3

4

5

6

7

8

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 32A

T

J

= 25

o

C

16A

8A

Fig. 6. Input Admittance

0

10

20

30

40

50

60

70

80

3456789

V

GE

- Volts

I

C

-

Amperes

T

J

= 150

o

C

25

o

C

- 40

o

C

IXYH16N250CV1HV

IXYH16N250CV1HV

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