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IXYH16N250CV1HV

P1-P3P4-P6P7-P7
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYH16N250CV1HV
Fig. 25. Dynamic Parameters Q
RR,
I
RR
vs.
Junction Temperature
0.80
0.85
0.90
0.95
1.00
1.05
0 20 40 60 80 100 120 140 160
T
J
(ºC)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 1200V
I
F
= 16A
-diF /dt = 500A/μs
Fig. 26. Maximum Transient Thermal Impedance
(Diode)
0.1
1
0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 21. Diode Forward Characteristics
0
10
20
30
40
50
60
70
0123456789101112
V
F
(V)
I
F
(A)
T
J
= 25ºC
T
J
= 150ºC
Fig. 22. Reverse Recovery Charge vs. -di
F
/dt
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
200 400 600 800 1000 1200 1400 1600 1800
-di
F
/ dt (A/μs)
Q
RR
(μC)
I
F
= 32A
8A
16A
T
J
= 150ºC
V
R
= 1200V
Fig. 23 Reverse Recovery Current vs. -di
F
/dt
10
15
20
25
30
35
40
45
50
55
200 400 600 800 1000 1200 1400 1600 1800
di
F
/dt (A/μs)
I
RR
(A)
T
J
= 150ºC
V
R
= 1200V
I
F
= 32A
16A
8A
F
i
g. 24. Reverse Recovery Time vs. -di
F
/dt
100
120
140
160
180
200
220
240
200 400 600 800 1000 1200 1400 1600 1800
-di
F
/dt (A/μs)
t
RR
(ns)
T
J
= 150ºC
V
R
= 1200V
8A
16A
32A
P1-P3P4-P6P7-P7

IXYH16N250CV1HV

Mfr. #:
Buy IXYH16N250CV1HV
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
Lifecycle:
New from this manufacturer.
Delivery:
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