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IXYH16N250CV1HV

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH16N250CV1HV
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
0 1020304050607080
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
250 500 750 1000 1250 1500 1750 2000 2250 2500
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 10
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090100
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1250V
I
C
= 16A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYH16N250CV1HV
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
50
100
150
200
250
300
350
400
8 121620242832
I
C
- Amperes
t
f i
- Nanoseconds
160
200
240
280
320
360
400
440
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 1250V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductiv e Turn-off Switching Times vs.
Junction Temperature
100
150
200
250
300
350
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
200
240
280
320
360
400
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 1250V
I
C
= 32A
I
C
= 16A
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2
4
6
8
10
12
14
10 20 30 40 50 60 70 80
R
G
- Ohms
E
off
- MilliJoules
0
4
8
12
16
20
24
E
on
- MilliJoules
E
off
E
on
T
J
= 150ºC , V
GE
= 15V
V
CE
= 1250V
I
C
= 16A
I
C
= 32A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
0
50
100
150
200
250
300
350
400
10 20 30 40 50 60 70 80
R
G
- Ohms
t
f i
- Nanoseconds
200
300
400
500
600
700
800
900
1000
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 32A
I
C
= 16A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
2
4
6
8
10
12
8 121620242832
I
C
- Amperes
E
off
- MilliJoules
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
R
G
= 10
Ω
V
GE
= 15V
V
CE
= 1250V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
2
4
6
8
10
12
14
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
2
4
6
8
10
12
14
16
E
on
- MilliJoules
E
off
E
on
R
G
= 10
Ω
V
GE
= 15V
V
CE
= 1250V
I
C
= 16A
I
C
= 32A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH16N250CV1HV
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
8 121620242832
I
C
- Amperes
t
r i
- Nanoseconds
10
12
14
16
18
20
22
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 1250V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
10
20
30
40
50
60
70
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
10
12
14
16
18
20
22
24
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 1250V
I
C
= 32A
I
C
= 16A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
10 20 30 40 50 60 70 80
R
G
- Ohms
t
r i
- Nanoseconds
0
20
40
60
80
100
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 16A
I
C
= 32A
IXYS REF: IXY_16N250CV1HV(5P-AT628) 4-05-17-A
P1-P3P4-P6P7-P7

IXYH16N250CV1HV

Mfr. #:
Buy IXYH16N250CV1HV
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
Lifecycle:
New from this manufacturer.
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