MMG3011NT1
1
RF Device Data
Freescale Semiconductor, Inc.
MMG3011NT1
0--6000 MHz, 15 dB
15 dBm
InGaP HBT GPA
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
The MMG3011N T1 is a general purpose amplifier that is internally
input and output matched. It is designed for a broad range of Class A ,
small -- s ignal, high linearity, general purpose applications . It is suitable
for applications with frequencies from 0 to 6000 MHz s uch as c ellular,
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small --
signal RF.
Features
Frequency: 0 to 6000 MHz
P1dB: 15 dBm @ 900 MHz
Small--Signal Gain: 15 dB @ 900 MHz
Third Order Output Intercept Point: 28 dBm @ 900 MHz
Single 5 V Supply
Internally Matched to 50 Ohms
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
SOT--89
Table 1. Typical Performance
(1)
Characteristic Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small--Signal Gain
(S21)
G
p
15 14 12 dB
Input Return Loss
(S11)
IRL -- 1 8 -- 2 5 -- 2 5 dB
Output Return Loss
(S22)
ORL -- 2 5 -- 1 8 -- 1 7 dB
Power Output @1dB
Compression
P1dB 15 13.5 13.5 dBm
Third Order Output
Intercept Point
OIP3 28 26.5 26 dBm
1. V
CC
=5Vdc,T
A
=25C, 50 ohm system.
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage V
CC
6 V
Supply Current I
CC
80 mA
RF Input Power P
in
10 dBm
Storage Temperature Range T
stg
--65 to +150 C
Junction Temperature T
J
150 C
Table 3. Thermal Characteristics
Characteristic Symbol Value
(2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 87C, 5 Vdc, 41 mA, no RF applied
R
JC
83 C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15
Document Number: MMG3011NT1
Rev. 7, 9/2014
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2005--2008, 2012, 2014.
ll rights reserved.
