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MMG3011NT1

P1-P3P4-P6P7-P9P10-P12P13-P14
4
RF Device Data
Freescale Semiconductor, Inc.
MMG3011NT1
50 OHM TYPICAL CHARACTERISTICS
18
33
4.9
V
CC
, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
30
27
24
21
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
4.95 5 5.15.05
f = 900 MHz
1 MHz Tone Spacing
100-- 4 0 -- 2 0 0 2 0 4 0 6 0 8 0
24
31
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
29
28
27
26
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
25
Figure 10. Third Order Intermodulation Distortion
versus Output Power
P
out
, OUTPUT POWER (dBm)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
-- 6 -- 3 0
3
6
-- 8 0
-- 3 0
-- 5 0
-- 6 0
-- 7 0
-- 4 0
150
10
3
10
5
120
Figure 11. MTTF versus Junction Temperature
10
4
125 130 135 140 145
T
J
, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with V
CC
=5Vdc,I
CC
=41mA
MTTF (YEARS)
4
0
8
0
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
6
4
2
123
NF, NOISE FIGURE (dB)
-- 7 0
-- 2 0
-- 3
P
out
, OUTPUT POWER (dBm)
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
-- 3 0
-- 4 0
-- 5 0
-- 6 0
960
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
12
30
3
V
CC
=5Vdc
f = 900 MHz
1 MHz Tone Spacing
129
V
CC
=5Vdc
V
CC
= 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability(CCDF)
V
CC
=5Vdc
f = 900 MHz
1 MHz Tone Spacing
LIFETIME
BUY
LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15
MMG3011NT1
5
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 40--300 MHz
Figure 14. 50 Ohm Test Circuit Schematic
RF
OUTPUT
RF
INPUT
V
SUPPLY
C3 C4
Z1 Z2
C1
Z5
C2
R1
L1
V
CC
Z4Z3
DUT
Figure 15. S21, S11 and S22 versus Frequency
-- 4 0
20
0
f, FREQUENCY (MHz)
S22
200 300 400 500
10
0
-- 1 0
-- 2 0
-- 3 0
Figure 16. 50 Ohm Test Circuit Component Layout
C1
L1
C2
R1
C4
C3
Z1, Z5 0.347 x 0.058 Microstrip
Z2 0.575 x 0.058 Microstrip
Z3 0.172 x 0.058 Microstrip
Z4 0.403 x 0.058 Microstrip
PCB Getek Grade ML200C, 0.031 ,
r
=4.1
S21, S1 1, S22 (dB)
S21
100
MMG30XX
Rev 2
S11
V
CC
=5Vdc
Table 8. 50 Ohm Test Circuit C omponent Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3 0.01 F Chip Capacitors C0603C103J5RAC Kemet
C4 1000 pF Chip Capacitor C0603C102J5RAC Kemet
L1 470 nH Chip Inductor BK2125HM471--T Taiyo Yuden
R1
0 Ω Chip Resistor
ERJ3GEY0R00V Panasonic
LIFETIME
BUY
LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15
6
RF Device Data
Freescale Semiconductor, Inc.
MMG3011NT1
50 OHM APPLICATION CIRCUIT: 300--3600 MHz
Figure 17. 50 Ohm Test Circuit Schematic
RF
OUTPUT
RF
INPUT
V
SUPPLY
C3
C4
Z1 Z2
C1
Z5
C2
R1
L1
V
CC
Z4Z3
DUT
Figure 18. S21, S11 and S22 versus Frequency
-- 4 0
20
f, FREQUENCY (MHz)
S22
800
10
0
-- 1 0
-- 2 0
Figure 19. 50 Ohm Test Circuit Component Layout
C1
L1
C2
R1
C4
C3
Z1, Z5 0.347 x 0.058 Microstrip
Z2 0.575 x 0.058 Microstrip
Z3 0.172 x 0.058 Microstrip
Z4 0.403 x 0.058 Microstrip
PCB Getek Grade ML200C, 0.031 ,
r
=4.1
S21, S1 1, S22 (dB)
S21
S11
1300300 1800 2300 2800 3300 3800
MMG30XX
Rev 2
-- 3 0
V
CC
=5Vdc
Table 9. 50 Ohm Test Circuit C omponent Designations and Values
Part Description Part Number Manufacturer
C1, C2 150 pF Chip Capacitors C0603C151J5RAC Kemet
C3 0.01 F Chip Capacitor C0603C103J5RAC Kemet
C4 1000 pF Chip Capacitor C0603C102J5RAC Kemet
L1 56 nH Chip Inductor HK160856NJ--T Taiyo Yuden
R1
0 Ω Chip Resistor
ERJ3GEY0R00V Panasonic
LIFETIME
BUY
LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15
P1-P3P4-P6P7-P9P10-P12P13-P14

MMG3011NT1

Mfr. #:
Buy MMG3011NT1
Manufacturer:
NXP / Freescale
Description:
RF Amplifier 12DBM 15DBGAIN GPA SOT89
Lifecycle:
New from this manufacturer.
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