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NCP81174MNTXG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NCP81174
www.onsemi.com
7
ELECTRICAL CHARACTERISTICS
(V
VCC
= 5 V, V
REFIN
= 1.0 V, V
PSI
= 3.3 V, typical values are referenced to T
A
= 25°C, Min and Max values are referenced to T
A
from 0°C
to 100°C. unless other noted.)
Characteristics
Test Conditions Symbol Min Typ Max Unit
SUPPLY VOLTAGE
System Input Voltage Range
V
SYS
7.0 20 V
SUPPLY CURRENT
DC Supply Current
Vsys = 13.2 V, Rshunt = 150 54 60 mA
UVLO Turn−On Current 30 35 mA
VCC UVLO Rising 4.9 5.2 V
VCC UVLO Falling 3.8 4.1 V
VCC Quiescent Current no switching, PS0
no switching, PS1/PS2
I
CC
−
−
46
46
−
−
mA
mA
SWITCHING FREQUENCY
PS0 Switching Frequency Range
F
sw
200 1000 kHz
Switching Frequency Accuracy 10 %
ROSC Output Voltage 2.0 2.05 V
VOLTAGE REFERENCE
VREF Reference Voltage
I
REF
= 1 mA V
VREF
1.98 2.0 2.02 V
PWM MODULATION
Minimum On Time (Note 3)
Fsw = 800 kHz −
30
− ns
0% Duty Cycle COMP voltage when the PWM outputs
remain HI
− 1.3 − V
100% Duty Cycle COMP voltage when the PWM outputs
remain HI
− 2.3 − V
PWM Phase Angle Error Between adjacent phases −15 15 °
VOLTAGE ERROR AMPLIFIER
Open−Loop DC Gain (Note 3)
100 dB
Unity Gain Bandwidth (Note 3) 10 MHz
Slew Rate (Note 3) 5
V/ms
COMP Voltage Swing
I
COMP
(source) = 2 mA 3.5 − − V
I
COMP
(sink) = 0.2 mA − − 50 mV
Non−inverting Voltage Range (Note 3) 0 1.3 3 V
Input Bias Current −50 0 50 nA
Input Offset Voltage (Note 3) VSP = VSN = 1.0 V −1.0 1.0 mV
CURRENT−SENSE AMPLIFIER
Input Bias Current
CSx = CSxN = 1.0 V −200 0 200 nA
Input Offset Voltage (Note 3) −1.0 1.0 mV
Common Mode Input Range (Note 3) −0.3 2.0 V
Differential Mode Input Range −120 120 mV
Closed−Loop DC Gain (Note 3) 0 V < CSx − CSxN < 0.1 V 5.7 6.0 6.3 V/V
−3dB Gain Bandwidth (Note 3) 10 MHz
Current Sharing Offset −2.5 − 2.5 mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Guaranteed by design, may not be tested.
NCP81174
www.onsemi.com
8
ELECTRICAL CHARACTERISTICS
(V
VCC
= 5 V, V
REFIN
= 1.0 V, V
PSI
= 3.3 V, typical values are referenced to T
A
= 25°C, Min and Max values are referenced to T
A
from 0°C
to 100°C. unless other noted.)
Characteristics UnitMaxTypMinSymbolTest Conditions
CURRENT SUMMING AMPLIFIER
Current Sense Input to CSSUM DC Gain
−60 mV < CSx − CSxN < 60 mV −3.93 V/V
Current Sense Input to CSSUM −3 dB
Bandwidth (Note 3)
CL = 10 pF to GND, RL = 10 kW to
GND
4 MHz
CSSUM Output Slew Rate (Note 3) 4
V/ms
CSSUM Summing Amp Output Offset
(Note 3)
−15 0 15 mV
Maximum CSSUM Output Voltage 3.0 V
Minimum CSSUM Output Voltage 0.3 V
Output Source Current (Note 3) 1 − − mA
Output Sink Current (Note 3) 1 − − mA
DROOP AMPLIFIER VDRP
Input Bias Current (Note 3)
−200 200 nA
Input Offset Voltage (Note 3) VSP = VSN = 1.1 V −4.0 4.0 mV
Open Loop DC Gain (Note 3)
CL = 20 pF to GND including ESD
RL = 1 kW to GND
− 100 dB
Open Loop Unity Gain Bandwidth
(Note 3)
CL = 20 pF to GND including ESD
RL = 1 kW to GND
− 10 − MHz
Maximum Output Voltage I
SOURCE
= 4.0 mA 3 − − V
Minimum Output Voltage
I
SINK
= 1.0 mA − − 1 V
Output source current (Note 3) Vout = 3.0 V 4 − − mA
Output sink current (Note 3) Vout = 1.0 V 1 − − mA
REMOTE VOLTAGE DIFFERENTIAL SENSE AMPLIFIER
Input Bias Current (Note 3) VSN = 0 V 30
mA
VSP Input Pull down Resistance
DRVON = low
DRVON = high
1.5
17
kW
VSP Input Bias Voltage (Note 3)
DRVON = low
DRVON = high
0.09
0.66
V
Input Voltage Range (Note 3) −0.3 − 3.0 V
3dB Bandwidth (Note 3)
CL = 80 pF to GND,
RL = 10 kW to GND
− 10 − MHz
Closed Loop DC gain VSP −VSN = 0.5 to 1.3 V 0.98 1.0 1.025 V/V
Maximum Output Voltage I
SOURCE
= 2 mA 3.0 − − V
Minimum Output Voltage
I
SINK
= 2 mA − − 0.5 V
Output source current (Note 3) Vout = 3 V 2.0 − − mA
Output sink current (Note 3) Vout = 0.5 V 2.0 − − mA
DRVON
Output High Voltage
Sourcing 500 mA
3.0 − − V
Output Low Voltage
Sinking 500 mA
− − 0.7 V
Rise Time
CL (PCB) = 20 pF,
DVo = 10% to 90%
− 20 − ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Guaranteed by design, may not be tested.
NCP81174
www.onsemi.com
9
ELECTRICAL CHARACTERISTICS
(V
VCC
= 5 V, V
REFIN
= 1.0 V, V
PSI
= 3.3 V, typical values are referenced to T
A
= 25°C, Min and Max values are referenced to T
A
from 0°C
to 100°C. unless other noted.)
Characteristics UnitMaxTypMinSymbolTest Conditions
DRVON
Fall Time
CL (PCB) = 20pF,
DVo = 10% to 90%
− 20 − ns
ENABLE
Enable Threshold
EN rising − 1.1 1.15 V
EN falling 0.95 1.0
EN 3.3V IO Detection Threshold
EN rising 2.5 2.55 V
EN falling 2.35 2.4
EN Input Bias Current External 1k pull−up to 3.3 V − − 1.0
mA
POWER SAVE INPUT
PSI High Threshold (3.3 V input logic),
Refer to Table 1
Rising
Falling
V
highPSI_3.3V
2.05
2.4
2.2
2.55
V
PSI High Threshold (1.8 V input logic),
Refer to Table 2
Rising
Falling
V
highPSI_1.8V
1.05
1.4
1.2
1.55 V
PSI Low Threshold
Rising
Falling
V
lowPSI
0.5
0.8
0.6
0.95 V
PSI Input Bias Current (Note 3) − − 1.0
mA
PWM OUTPUTS
Output High Voltage
Sourcing 500 mA
3.0 − − V
Mid Output Voltage 1.4 1.5 1.6 V
Output Low Voltage
Sinking 500 mA
− − 0.7 V
Rise Time
CL (PCB) = 50 pF,
DVo = 10% to 90%
− 10 15 ns
Fall Time
CL (PCB) = 50 pF,
DVo = 10% to 90%
− 10 15 ns
4/3/2 PHASE DETECTION
Gate Pin Source Current
− 80 − uA
Gate Pin Threshold Voltage 210 240 265 mV
Phase Detect Timer − 20 27
ms
VR_RDY – STARTUP
Vout Startup Delay
Measured from EN to Vout Start up
from 0 V
1.3 ms
VR_RDY Startup Delay Measured from EN to VR_RDY
assertion
1.9 ms
VR_RDY Shutdown Delay Measured from EN to VR_RDY
de−assertion
200 350 ns
VR_RDY Low Voltage I
VR_RDY
= 10 mA (sink) − − 0.4 V
VR_RDY Leakage Current VR_RDY = 5 V − − 0.2
mA
PROTECTION – OCP, OVP, UVP
Current Limit ILIM to VDRP Gain
0.95 1.0 1.05 V/V
Current Limit ILIM to VDRP Gain in PSI 0.25 V/V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Guaranteed by design, may not be tested.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

NCP81174MNTXG

Mfr. #:
Buy NCP81174MNTXG
Manufacturer:
ON Semiconductor
Description:
Switching Controllers 4/3/2-PHASE SYNCHRONOUS B
Lifecycle:
New from this manufacturer.
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