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4
DEVICE OPERATIONS
Read Operation
The serial SRAM Read operation is started by by enabling
CS
low. First, the 8-bit Read instruction is transmitted to the
device through the SI (or SIO0-3) pin(s) followed by the
24-bit address with the 7 MSBs of the address being “don’t
care” bits and ignored. In SPI mode, after the READ
instruction and address bits are sent, the data stored at that
address in memory is shifted out on the SO pin after the
output valid time. Additional “dummy” clock cycles (four in
DUAL and two in QUAD) are required to follow the
instruction and address inputs prior to the data being driven
out on the SIO0-3 pins while operating in these two modes.
By continuing to provide clock cycles to the device, data
can continue to be read out of the memory array in
sequentially. The internal address pointer is automatically
incremented to the next higher address after each byte of
data is read out until the highest memory address is reached.
When the highest memory address is reached, 1FFFFh, the
address pointer wraps to the address 00000h. This allows the
read cycles to be continued indefinitely. All Read operations
are terminated by pulling CS
high.
Figure 2. SPI Read Sequence (Single Byte)
CS
Instruction
SI
043251698107 11
SCK
23 22 21 20 210
7
6543210High−Z
24−bit address
Data Out
SO
29 3130 32 36 37 38 3934 3533
000 00011
Figure 3. SPI Read Sequence (Sequential Bytes)
CS
Instruction
SI
043251698107 11
SCK
23 22 21 20 210
7
6543210High−Z
24−bit address
Data Out from ADDR 1
SO
29 3130 32 36 37 38 3934 3533
000 00 011
7 6543210
Data Out from ADDR 2
7 6543210 7 6543210
...
40 4241 43 47 48 49 5045 4644 51 5352 54 55
Don’t Care
Don’t Care
ADDR 1
Data Out from ADDR 3 Data Out from ADDR n
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5
Figure 4. DUAL Read Sequence
CS
SIO[1:0]
043251121514 1613 17
SCK
A11 A0
18 2019
C3 C2 A10 A3 A2 A1 H0 H0 L0 L0 H1 H1 L1 L1
MSB MSB
Notes:
Instruction 24−bit address Data out
XX
21 22
C1 C0 XX
23 24 25
26
C[3:0] = 03h
H0 = 2 high order bits of data byte 0
L0 = 2 low order bits of data byte 0
H1 = 2 high order bits of data byte 1
L1 = 2 low order bits of data byte 1
Figure 5. QUAD Read Sequence
CS
SIO[3:0]
04325169810711
SCK
A5 A0
12 1413
C1 C0 A4 A3 A2 A1 H0 L0 H1 L1 H2 L2 H3 L3
MSB MSB
Notes:
Instruction 24−bit address Data out
XX
15 16
C[1:0] = 03h
H0 = 4 high order bits of data byte 0
L0 = 4 low order bits of data byte 0
H1 = 4 high order bits of data byte 1
L1 = 4 low order bits of data byte 1
Write Operation
The serial SRAM WRITE is selected by enabling CS low.
First, the 8-bit WRITE instruction is transmitted to the
device followed by the 24-bit address with the 7 MSBs being
don’t care. After the WRITE instruction and addresses are
sent, the data to be stored in memory is shifted in on the SI
pin.
If operating in page mode, after the initial word of data is
shifted in, additional data words can be written as long as the
address requested is sequential on the same page. Simply
write the data on SI pin and continue to provide clock pulses.
The internal address pointer is automatically incremented to
the next higher address on the page after each word of data
is written in. This can be continued for the entire page length
of 32 words long. At the end of the page, the addresses
pointer will be wrapped to the 0 word address within the
page and the operation can be continuously looped over the
32 words of the same page. The new data will replace data
already stored in the memory locations.
If operating in burst mode, after the initial word of data is
shifted in, additional data words can be written to the next
sequential memory locations by continuing to provide clock
pulses. The internal address pointer is automatically
incremented to the next higher address after each word of
data is read out. This can be continued for the entire array
and when the highest address is reached, 1FFFFh, the
address counter wraps to the address 00000h. This allows
the burst write cycle to be continued indefinitely. Again, the
new data will replace data already stored in the memory
locations.
All WRITE operations are terminated by pulling CS
high.
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6
Figure 6. SPI Write Sequence
CS
Instruction
SI
043251698107 11
SCK
23 22 21 20 21076543210
High−Z
24−bit address Data In to ADDR 1
SO
29 3130 32 36 37 38 3934 3533
000 00 010
7 6543210
Data In to ADDR 2
7 6543210 7 6543210
...
40 4241 43 47 48 49 5045 4644 51 5352 54 55
ADDR 1
Data In to ADDR 3 Data In to ADDR n
High−Z
Figure 7. DUAL Write Sequence
H0 H0 L0 L0 H1 H1 Ln Ln
Data in
MSB
Notes:
CS
SIO1:0]
043251121514 1613 17
SCK
A11 A0
18 2019
C3 C2 A10 A3 A2 A1
MSB
Instruction 24−bit address
21
C1 C0
C[3:0] = 02h
H0 = 2 high order bits of data byte 0
L0 = 2 low order bits of data byte 0
H1 = 2 high order bits of data byte 1
L1 = 2 low order bits of data byte 1

N01S830HAT22I

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
SRAM 1MB UltraLow Pwr Serial SRAM
Lifecycle:
New from this manufacturer.
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