N01S830HA, N01S830BA
www.onsemi.com
9
Table 5. MODE REGISTER
Bit Function
0 Hold Function
1 = Hold function disabled
0 = Hold function enabled (Default)
1 Reserved
2 Reserved
3 Reserved
4 Reserved
5 Reserved
6
Operating Mode
Bit 7 Bit 6
0 0 = Word Mode
1 0 = Page Mode
0 1 = Burst Mode (Default)
1 1 = Reserved
7
Power-Up State
The serial SRAM enters a know state at power-up time.
The device is in low-power standby state with CS
= 1. A low
level on CS
is required to enter a active state.
Battery Back-Up Operation
The Battery Back-Up function is available on the BBU
version of the serial SRAM. This version of the SRAM
cannot operate in the QUAD mode since the SIO3 input is
used for the VBAT connection. A standard coin cell battery
should be connected to the VBAT pin. On chip circuitry
monitors the V
CC
pin and when it is determined that the main
V
CC
power supply is turning off, the device automatically
switches the memory array to VBAT power input. When in
battery back-up mode and 3.0 to 3.4 V power supplied to the
VBAT input, memory data is retained in the SRAM array
and all existing interface and operating mode information is
retained.
Figure 15. Battery Back-Up Version Schematics
SO
NC
VSS
VCC
SCK
SI
Coin Cell Battery
3.0 to 3.4 V
VBAT
Serial
SRAM
CS
Table 6. ABSOLUTE MAXIMUM RATINGS
Item Symbol Rating Units
Voltage on any pin relative to V
SS
V
IN,OUT
–0.3 to V
CC
+ 0.3 V
Voltage on V
CC
Supply Relative to V
SS
V
CC
–0.3 to 5.5 V
Power Dissipation P
D
500 mW
Storage Temperature T
STG
−40°C to 125°C °C
Ambient Temperature Under Bias T
A
−40°C to +125°C °C
Soldering Temperature and Time T
SOLDER
260°C, 10 sec °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 7. OPERATING CHARACTERISTICS (Industrial (I): T
A
= −40°C to +85°C, Automotive (E): T
A
= −40°C to +125°C)
Item Symbol Test Conditions Min Typ (Note 1) Max Units
Supply Voltage V
CC
2.5 5.5 V
Data Retention Voltage V
DR
1.0 V
Input High Voltage V
IH
0.7 V
CC
V
CC
+ 0.3 V
Input Low Voltage V
IL
−0.3 0.1 V
CC
V
Output High Voltage V
OH
I
OH
= −0.4 mA V
CC
− 0.2 V
Output Low Voltage V
OL
I
OL
= 1 mA 0.2 V
Input Leakage Current I
LI
CS = V
CC
, V
IN
= 0 to V
CC
1.0
mA
Output Leakage Current I
LO
CS = V
CC
, V
OUT
= 0 to V
CC
1.0
mA
Operating Current I
CC
f = 20 MHz, I
OUT
= 0, SPI / DUAL 10
mA
f = 20 MHz, I
OUT
= 0, QUAD 20
Standby Current I
SB
CS = V
CC
, V
IN
= V
SS
or V
CC
, I−Temp 4 10 mA
CS = V
CC
, V
IN
= V
SS
or V
CC
, E−Temp 20
1. Typical values are measured at V
CC
= V
CC
Typ., T
A
= 25°C and are not 100% tested.
