BSP316PH6327XTSA1

P1-P3 P4-P6 P7-P9

2016-05-30

Rev. 2.0 Page 1

BSP316P

SIPMOS







Small-Signal-Transistor

Product Summary

V

DS

-100 V

R

DS(on)

1.8 Ω

I

D

-0.68 A

Feature

• P-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

PG-SOT223-4-1

Gate

pin1

Drain

pin 2/4

Source

pin 3

Marking

BSP316P

Type Package

Tape and Reel Information

BSP316P

PG-SOT223-4-1

H6327: 1000 pcs/reel

Maximum Ratings, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Value Unit

Continuous drain current

T

A

=25°C

T

A

=70°C

I

D

-0.68

-0.54

A

Pulsed drain current

T

A

=25°C

I

D puls

-2.72

Reverse diode dv/dt

I

S

=-0.68A, V

DS

=-48V, di/dt=-200A/µs, T

jmax

=150°C

dv/dt

6 kV/µs

Gate source voltage V

GS

±20

V

Power dissipation

T

A

=25°C

P

tot

1.8 W

Operating and storage temperature

T

j

,

T

stg

-55... +150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

• Qualified according to AEC Q101

Packaging

Non dry

ESD Class

JESD22-A114-HBM

Class 1a

•

HalogenfreeaccordingtoIE C61249221

BSP316P

Thermal Characteristics

Parameter

Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

R

thJS

- 15 25 K/W

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

1)

R

thJA

-

-

80

48

115

70

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V

GS

=0, I

D

=-250µA

V

(BR)DSS

-100 - - V

Gate threshold voltage, V

GS

= V

DS

I

D

=-170µA

V

GS(th)

-1 -1.5 -2

Zero gate voltage drain current

V

DS

=-100V, V

GS

=0, T

j

=25°C

V

DS

=-100V, V

GS

=0, T

j

=150°C

I

DSS

-

-

-0.1

-10

-0.2

-100

µA

Gate-source leakage current

V

GS

=-20V, V

DS

=0

I

GSS

- -10 -100 nA

Drain-source on-state resistance

V

GS

=-4.5V, I

D

=-0.61A

R

DS(on)

- 1.5 2.3

Ω

Drain-source on-state resistance

V

GS

=-10V, I

D

=-0.68A

R

DS(on)

- 1.4 1.8

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2016-05-30

Rev.2.0 Page 2

BSP316P

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

fs

|V

DS

|≥2*|I

D

|*R

DS(on)max

,

I

D

=-0.54A

0.5 1 - S

Input capacitance C

iss

V

GS

=0, V

DS

=-25V,

f=1MHz

- 117 146 pF

Output capacitance C

oss

- 27.7 34.5

Reverse transfer capacitance C

rss

- 12 15

Turn-on delay time t

d(on)

V

DD

=-50V, V

GS

=-10V,

I

D

=-0.68A, R

G

=6Ω

- 4.7 7 ns

Rise time t

r

- 7.5 11.2

Turn-off delay time t

d(off)

- 67.4 101

Fall time t

f

- 25.9 38.9

Gate Charge Characteristics

Gate to source charge

Q

gs

V

DD

=-80V, I

D

=-0.68A - -0.2 -0.3 nC

Gate to drain charge Q

gd

- -1.87 -2.8

Gate charge total Q

g

V

DD

=-80V, I

D

=-0.68A,

V

GS

=0 to -10V

- -5.1 -6.4

Gate plateau voltage V

(plateau)

V

DD

=-80V, I

D

=-0.68A - -2.7 - V

Reverse Diode

Inverse diode continuous

forward current

I

S

T

A

=25°C - - -0.68 A

Inv. diode direct current, pulsed I

SM

- - -2.72

Inverse diode forward voltage V

SD

V

GS

=0, I

F

=-0.68A - -0.85 -1.2 V

Reverse recovery time t

rr

V

R

=-50V, I

F

=

l

S

,

di

F

/dt=100A/µs

- 44.2 55.3 ns

Reverse recovery charge Q

rr

- 56.3 70.4 nC

2016-05-30

Rev.2.0 Page 3

P1-P3 P4-P6 P7-P9

BSP316PH6327XTSA1

Mfr. #:

Buy BSP316PH6327XTSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET P-Ch -100V -680mA SOT-223-3

Lifecycle:

New from this manufacturer.

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BSP316PH6327XTSA1