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BSP316PH6327XTSA1

P1-P3P4-P6P7-P9
BSP316P
1 Power dissipation
P
tot
= f (T
A
)
0 20 40 60 80 100 120
°C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: |V
GS
| ≥ 10V
0 20 40 60 80 100 120
°C
160
T
A
0
-0.05
-0.1
-0.15
-0.2
-0.25
-0.3
-0.35
-0.4
-0.45
-0.5
-0.55
-0.6
A
-0.75
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25°C
-10
-1
-10
0
-10
1
-10
2
-10
3
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
A
I
D
R
D
S
(
o
n
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
t
p
= 250.0µs
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2016-05-30
Rev.2.0 Page 4
BSP316P
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
=25°C, -V
GS
0 0.5 1 1.5 2 2.5 3 3.5 4
V
5
-V
DS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
A
2.4
-I
D
10V
5V
4.4V
3.6V
3.2V
2.8V
2.4V
2.2V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: T
j
=25°C, -V
GS
0 0.4 0.8 1.2 1.6
A
2.4
-I
D
0
1
2
3
4
5
Ω
7
R
DS(on)
2.2V
2.4V
2.8V
3.2V
3.6V
4.4V
5V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS
|
≥ 2 x |I
D
| x R
DS(on)max
parameter: T
j
= 25 °C
0 0.5 1 1.5 2 2.5 3 3.5
V
4.5
-V
GS
0
0.5
1
1.5
2
2.5
A
3.5
-I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
=25°C
0 0.4 0.8 1.2 1.6 2 2.4
A
3.2
-I
D
0
0.3
0.6
0.9
1.2
S
1.8
g
fs
2016-05-30
Rev.2.0 Page 5
BSP316P
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= -0.68 A, V
GS
= -10 V
-60 -20 20 60 100
°C
180
T
j
0
0.5
1
1.5
2
2.5
3
3.5
4
Ω
5
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
-60 -20 20 60 100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz, T
= 25 °C
0 4 8 12 16 20 24 28
V
36
-V
DS
0
10
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4
V
-3
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
2016-05-30
Rev.2.0 Page 6
P1-P3P4-P6P7-P9

BSP316PH6327XTSA1

Mfr. #:
Buy BSP316PH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -100V -680mA SOT-223-3
Lifecycle:
New from this manufacturer.
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