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MRF8S23120HR5

P1-P3P4-P6P7-P9P10-P12P13-P14
MRF8S23120HR3 MRF8S23120HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for LTE base station applic ations with frequencies from 2300 to
2400 MHz. Can be used in Class AB and Class C for all typic al cellular base
station modulation formats.
! Typical Single--Carrier W--CDMA Performance: V
DD
=28Volts,I
DQ
=
800 mA, P
out
= 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G
ps
(dB)
"
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz 16.0 31.9 6.1 --37.1
2350 MHz 16.3 30.9 6.4 --37.9
2400 MHz 16.6 31.2 6.3 --37.5
! Capable of Handling 5:1 VSWR, @ 30 Vdc, 2350 MHz, 138 Watts CW
(1)
Output Power (2 dB Input Overdrive from Rated P
out
)
! Typical P
out
@ 1 dB Compression Point ≃ 107 Watts CW
Features
! 100% PAR Tested for Guaranteed Output Power Capability
! Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
! Internally Matched for Ease of Use
! Integrated ESD Protection
! Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
! Designed for Digital Predistortion Error Correction Systems
! Optimized for Doherty Applications
! RoHS Compliant
! In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +65 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
--65 to +150 #C
Case Operating Temperature T
C
150 #C
Operating Junction Temperature
(2,3)
T
J
225 #C
CW Operation @ T
C
=25#C
Derate above 25#C
CW 109
0.52
W
W/#C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76#C, 28 W CW, 28 Vdc, I
DQ
= 800 mA, 2400 MHz
Case Temperature 80#C, 120 W CW
(1)
,28Vdc,I
DQ
= 800 mA, 2400 MHz
R
$
JC
0.50
0.47
#C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to A N1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S23120H
Rev. 0, 11/2010
Freescale Semiconductor
Technical Data
2300--2400 MHz, 28 W AVG., 28 V
LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S23120HR3
MRF8S23120HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S23120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S23120HSR3
% Freescale Semiconductor, Inc., 2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8S23120HR3 MRF8S23120HSR3
Table 3. ESD Pro tection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (T
A
=25#C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=28Vdc,V
GS
=0Vdc)
I
DSS
— — 1 &Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 &Adc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 172 &Adc)
V
GS(th)
1.0 1.8 2.5 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
D
= 800 mAdc, Measured in Functional Test)
V
GS(Q)
1.8 2.6 3.3 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=1.72Adc)
V
DS(on)
0.1 0.15 0.3 Vdc
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 800 mA, P
out
= 28 W Avg., f = 2300 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Power Gain
G
ps
14.5 16.0 17.5 dB
Drain Efficiency "
D
29.0 31.9 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.7 6.1 — dB
Adjacent Channel Power Ratio ACPR — --37.1 --35.0 dBc
Input Return Loss IRL — -- 1 2 -- 7 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 800 mA, P
out
=28WAvg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Frequency
G
ps
(dB)
"
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz 16.0 31.9 6.1 --37.1 -- 1 2
2350 MHz 16.3 30.9 6.4 --37.9 -- 1 9
2400 MHz 16.6 31.2 6.3 --37.5 -- 1 8
1. Part internally matched both on input and output.
(continued)
MRF8S23120HR3 MRF8S23120HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
=25#C unless otherwise noted) (continued)
Characteristic Symbol
Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 800 mA, 2300--2400 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 107 — W
IMD Symmetry @ 84 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMD
sym
— 13 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation I nflection Point)
VBW
res
— 62 — MHz
Gain Flatness in 100 MHz Bandwidth @ P
out
=28WAvg. G
F
— 0.6 — dB
Gain Variation over Temperature
(--30#Cto+85#C)
(G — 0.002 — dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C)
(1)
(P1dB — 0.008 — dB/#C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
P1-P3P4-P6P7-P9P10-P12P13-P14

MRF8S23120HR5

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Buy MRF8S23120HR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV8 2.3GHZ 120W NI780H
Lifecycle:
New from this manufacturer.
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