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MRF8S23120HR5

P1-P3P4-P6P7-P9P10-P12P13-P14
4
RF Device Data
Freescale Semiconductor
MRF8S23120HR3 MRF8S23120HSR3
Figure 1. MRF8S23120HR3(HSR3) Test Circuit Component Layout
MRF8S23120H/S
Rev. 0
CUT OUT AREA
B1
C14
C16
C8
R1
C3C15
C5
C1
C2
C9 C11
C6*
C13
C4
C10 C12
C7*
+
*C6 and C7 are mounted vertically.
Table 5. MRF8S23120HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Ferrite Bead MPZ2012S300A TDK
C1, C4 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC
C2, C15 0.5 pF Chip Capacitors ATC100B0R5BT500XT ATC
C3 1.8 pF Chip Capacitor ATC100B1R5BT500XT ATC
C5, C6, C7 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC
C8 3.3 &F, 100 V Chip Capacitor C5750X7R2A335MT TDK
C9, C10, C11, C12, C14 10 &F, 50 V Chip Capacitors C5750X7R1H106KT TDK
C13 470 &F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp
C16 330 nF, 100 V Chip Capacitor C3225JB2A334KT TDK
R1 4.75 ), 1/4 W Chip Resistor CRCW12064R75FNEA Vishay
PCB 0.030*, +
r
=2.55 AD255A Arlon
MRF8S23120HR3 MRF8S23120HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
2290
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 28 Watts Avg.
-- 3 0
-- 1 0
-- 1 5
-- 2 0
-- 2 5
15.2
17.2
17
16.8
-- 3 9
34
33
32
31
-- 3 4
-- 3 5
-- 3 6
-- 3 7
"
D
, DRAIN
EFFICIENCY (%)
"
D
16.6
16.4
16.2
16
15.8
15.6
15.4
2305 2320 2335 2350 2365 2380 2395 2410
30
-- 3 8
-- 3 5
PARC
PARC (dB)
-- 1 . 8
-- 1
-- 1 . 2
-- 1 . 4
-- 1 . 6
-- 2
ACPR (dBc)
V
DD
=28Vdc,P
out
=28W(Avg.),I
DQ
= 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
Figure 3. Intermodulation D istortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
P
out
, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
25
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
15
35 45 65
0
60
50
40
30
20
10
"
D
, DRAIN EFFICIENCY (%)
--1dB=26.5W
--2dB=36.5W
--3dB=48.5W
55
V
DD
=28Vdc,I
DQ
= 800 mA, f = 2350 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
"
D
ACPR
PARC
ACPR (dBc)
-- 5 0
-- 2 0
-- 2 5
-- 3 0
-- 4 0
-- 3 5
-- 4 5
17
G
ps
, POWER GAIN (dB)
16.6
16.2
15.8
15.4
15
14.6
G
ps
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
G
ps
, POWER GAIN (dB)
V
DD
=28Vdc,P
out
= 84 W (PEP), I
DQ
= 800 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
6
RF Device Data
Freescale Semiconductor
MRF8S23120HR3 MRF8S23120HSR3
TYPICAL CHARACTERISTICS
1
G
ps
ACPR
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 5. Single-- C arrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
11.5
17.5
0
60
50
40
30
20
"
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
16.5
15.5
10 100
10
-- 6 0
ACPR (dBc)
14.5
13.5
12.5
0
-- 3 0
-- 4 0
-- 5 0
Figure 6. Broadband Frequency Response
0
24
1800
f, FREQUENCY (MHz)
16
12
8
1900
GAIN (dB)
20
Gain
2000 2100 2200 2300 2400 2500 2600
IRL
-- 4 0
20
10
0
-- 1 0
-- 2 0
IRL (dB)
4--30
2300 MHz
2350 MHz
2400 MHz
V
DD
=28Vdc,I
DQ
= 800 mA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
"
D
V
DD
=28Vdc
P
in
=0dBm
I
DQ
= 800 mA
2300 MHz
2350 MHz
2400 MHz
2300 MHz
2350 MHz
2400 MHz
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO-- AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single-- C arrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
P1-P3P4-P6P7-P9P10-P12P13-P14

MRF8S23120HR5

Mfr. #:
Buy MRF8S23120HR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV8 2.3GHZ 120W NI780H
Lifecycle:
New from this manufacturer.
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