MRF8S23120HR3 MRF8S23120HSR3
7
RF Device Data
Freescale Semiconductor
V
DD
=28Vdc,I
DQ
= 800 mA, P
out
=28WAvg.
f
MHz
Z
source
)
Z
load
)
2290 8.41 -- j0.97 1.86 -- j4.43
2305 8.58 -- j0.55 1.83 -- j4.28
2320 8.78 -- j0.14 1.80 -- j4.14
2335 8.99 + j0.29 1.77 -- j4.01
2350 9.21 + j0.72 1.74 -- j3.88
2365 9.45 + j1.17 1.72 -- j3.77
2380 9.71 + j1.62 1.69 -- j3.66
2395 9.99 + j2.10 1.66 -- j3.54
2410 10.28 + j2.60 1.65 -- j3.43
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor
MRF8S23120HR3 MRF8S23120HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
35
P
in
, INPUT POWER (dBm)
V
DD
=28Vdc,I
DQ
= 800 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle
53
51
49
36
54
52
46
P
out
, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
50
55
57
3432 403130
56
48
47
29
Ideal
Actual
33 37 38 39
2350 MHz
2300 MHz
2400 MHz
2300 MHz
2400 MHz
2350 MHz
f
(MHz)
P1dB P3dB
W atts dBm Watts dBm
2300 152 51.8 185 52.7
2350 150 51.8 181 52.6
2400 147 51.7 177 52.5
Test Impedances per Compression Level
f
(MHz)
Z
source
)
Z
load
)
2300 P1dB 4.03 -- j5.45 2.24 + j0.08
2350 P1dB 4.63 -- j6.15 2.21 + j0.35
2400 P1dB 5.57 -- j5.96 2.36 + j0.47
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S23120HR3 MRF8S23120HSR3
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS

MRF8S23120HR5

Mfr. #:
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV8 2.3GHZ 120W NI780H
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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