ZXMS6001N3
Issue 1 - January 2008 3 www.zetex.com
© Zetex Semiconductors plc 2008
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper. Allocation of 6cm
2
copper 33% to source tab and 66% to drain pin with source tab and drain pin electrically
isolated.
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
(c) For a device surface mounted on FR4 board with the minimum copper required for electrical connections.
Parameter Symbol Limit Unit
Continuous Drain-Source Voltage V
DS
60 V
Drain-Source Voltage for short circuit protection V
IN
= 5V V
DS(SC)
36 V
Continuous Input Voltage V
IN
-0.2 ... +10 V
Peak Input Voltage V
IN
-0.2 ... +20 V
Continuous Input Current
-0.2V=V
IN
=10V
V
IN
<-0.2V or V
IN
>10V
I
IN
No limit
| I
IN
| ≤2
mA
Operating Temperature Range T
j
,
-40 to +150
°C
Storage Temperature Range T
stg
-55 to +150
°C
Power Dissipation at T
A
=25°C
(a)
P
D
1.5 W
Power Dissipation at T
A
=25°C
(c)
P
D
0.6 W
Continuous Drain Current @ V
IN
=5V; T
A
=25°C
(a)
I
D
1.1 A
Continuous Drain Current @ V
IN
=5V; T
A
=25°C
(c)
I
D
0.7 A
Continuous Source Current (Body Diode)
(a)
I
S
2.0 A
Pulsed Source Current (Body Diode)
(b)
I
S
3.3 A
Unclamped single pulse inductive energy E
AS
550 mJ
Load dump protection V
LoadDump
80 V
Electrostatic Discharge (Human Body Model) V
ESD
4000 V
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 40/150/56
Parameter Symbol Value Unit
Junction to ambient
(a)
R
⍜JA
83 °C/W
Junction to ambient
(b)
R
⍜JA
45 °C/W
Junction to ambient
(c)
R
⍜JA
208 °C/W
