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ZXMS6001N3TA

P1-P3P4-P6P7-P9P10-P10
ZXMS6001N3
Issue 1 - January 2008 4 www.zetex.com
© Zetex Semiconductors plc 2008
Recommended operating conditions
The ZXMS6001 is optimized for use with µC operating from 5V supplies.
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
NOTES:
(d) Recommended input voltage range over which protection circuits function as specified.
(e) The drain current is limited to a reduced value when Vds exceeds a safe level
Symbol Description Min Max Units
V
IN
Input voltage range 0 6 V
T
A
Ambient temperature range -40 125 °C
V
IH
High level input voltage for MOSFET
(d)
46V
V
P
Peripheral supply voltage
(voltage to which load is referred)
60 V
Parameter Symbol Min Typ Max Unit Conditions
Static Characteristics
Drain-Source Clamp
Voltage
V
DS(AZ)
60 70 75 V I
D
=10mA
Off state Drain Current I
DSS
0.1 3 ␮AV
DS
=12V, V
IN
=0V
Off state Drain Current I
DSS
315␮AV
DS
=32V, V
IN
=0V
Input Threshold Voltage
(d)
V
IN(th)
11.82.5VV
DS
=V
GS
, I
D
=10mA
Input Current I
IN
150 ␮AV
IN
=+3V
Input Current I
IN
335 500 ␮AV
IN
=+5V, all
circumstances
Static Drain-Source
On-State Resistance
R
DS(on)
12Ω V
IN
=3V, I
D
=0.1A
Static Drain-Source
On-State Resistance
R
DS(on)
520 675 mΩ V
IN
=5V, I
D
=0.7A
Current Limit
(e)
I
D(LIM)
11.83 AV
IN
=5V, V
DS
>5V
Dynamic Characteristics
Turn-On Time
(V
IN
to 90% I
D
)
t
on
27 40 ␮sR
L
=22Ω, V
IN
=0 to 5V,
V
DD
=12V
Turn-Off time
(V
IN
to 90% I
D
)
t
off
26 40 ␮sR
L
=22Ω, V
IN
=5V to 0V,
V
DD
=12V
Slew Rate On
(70 to 50% V
DD
)
-dV
DS
/dt
on
1.4 10 V/␮sR
L
=22Ω, V
IN
=0 to 5V,
V
DD
=12V
Slew Rate Off
(50 to 70% V
DD
)
DV
DS
/dt
on
1.2 10 V/␮sR
L
=22Ω, V
IN
=5V to 0V,
V
DD
=12V
ZXMS6001N3
Issue 1 - January 2008 5 www.zetex.com
© Zetex Semiconductors plc 2008
f Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Parameter Symbol Min Typ Max Unit Conditions
Protection Functions (f)
Minimum input voltage
for over temperature
protection
V
PROT
4 3.5 V Ttrip>150°C
Maximum input voltage
for over temperature
protection
V
PROT
7 6 V Ttrip>150°C
Thermal Overload Trip
Temperature
T
JT
150 175 °C
Thermal hysteresis 8 °C
Unclamped single pulse
inductive energy
Tj=25°C
E
AS
550 mJ I
D(ISO)
=0.7A, V
DD
=32V
Unclamped single pulse
inductive energy
Tj=150°C
E
AS
200 mJ I
D(ISO)
=0.7A, V
DD
=32V
Inverse Diode
Source drain voltage V
SD
1VV
IN
=0V, -I
D
=1.4A
012345
0
50
100
150
200
250
300
350
V
DS
= 13.5V
V
IN
= 5V
I
IN
- Input Current (µA)
V
IN
- Input Voltage (V)
-40 -20 0 20 40 60 80 100 120 140
0
1
2
3
V
IN
= 5V
Single Pulse = 300µs
V
DS
= 12V
Current Limit v Temperature
Input Current v Input Voltage
Temperature (°C)
Id
Lim
Current Limit (A)
ZXMS6001N3
Issue 1 - January 2008 6 www.zetex.com
© Zetex Semiconductors plc 2008
Application information
The current-limit protection circuitry is designed to de-activate at low Vds to prevent the load
current from being unnecessarily restricted during normal operation. The design max DC
operating current is therefore determined by the thermal capability of the package/board
combination, rather than by the protection circuitry (see graph page 8 'typical output
characteristic'). This does not compromise the products ability to self protect at low V
DS
.
The overtemperature protection circuit trips at a minimum of 150°C. So the available package
dissipation reduces as the maximum required ambient temperature increases. This leads to the
following maximum recommended continuous operating currents.
Minimum copper area characteristics
For minimum copper condition as described in note (c)
Max Ambient Temperature T
A
Maximum continuous current
V
IN
=5V
25°C at Vin=5V 720
70°C at Vin=5V 575
85°C at Vin=5V 520
125°C at Vin=5V 320
1 10 100
1m
10m
100m
1
1ms
Single Pulse
T
amb
=25°C
R
DS(on)
Limited
10ms
100ms
1s
Safe Operating Area
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
DC
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
see note (c) - Minimum Copper
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
P1-P3P4-P6P7-P9P10-P10

ZXMS6001N3TA

Mfr. #:
Buy ZXMS6001N3TA
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V LO INPT CURR SELF PROT LO SD SWCH
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New from this manufacturer.
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